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CDP7624-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 3V DIE. Review the specifications below when checking this part for your BOM.
RF Diode specifications for CDP7624-000
- Description：RF DIODE SCHOTTKY 3V DIE
- Series：-
- Mfr：Skyworks Solutions Inc.
- Package：Bulk
- Diode Type：Schottky - Single
- Voltage - Peak Reverse (Max)：3V
- Current - Max：100 mA
- Capacitance @ Vr, F：0.15pF @ 0V, 1MHz
- Resistance @ If, F：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TA)
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
RF Diode datasheet and documents for CDP7624-000
RF Diode Overview
The CDP7624-000 is an N-type silicon Schottky barrier diode chip designed for Ku-band applications. It features a medium/high barrier design with a maximum reverse voltage of 2 V and a forward current rating of 100 mA. The device operates within a temperature range of -55 °C to +150 °C and can withstand RF input power up to 75 mW at 25 °C. Electrical specifications include a typical video resistance (RV) of 450–575 Ω, a junction capacitance (CJ) of 0.15 pF at 0 V, and a forward voltage (VF) of 10 mV at 1 mA.
RF Diode Feature Summary
- N-type silicon construction optimized for Ku-band detector applications
- Medium/high barrier design providing specific impedance characteristics
- Planar passivated beam-lead and chip construction for reliability
- Large bond pad design to prevent mechanical damage during wire bonding
RF Diode Applications
- Microwave integrated circuit (MIC) detectors
- High-speed switches
- Low-power limiters
- Modulators
RF Diode Procurement Notes
Verify the exact ordering suffix against official Skyworks documentation before procurement. Confirm that the package type matches the required application substrate. Ensure handling procedures adhere to industry-standard ESD precautions to avoid damaging the sensitive semiconductor junctions during installation.
RF Diode Selection Notes
Select this component when Ku-band operation is required with specific impedance matching needs. The N-type material offers different noise and conversion loss characteristics compared to P-type alternatives. Evaluate the 450–575 Ω video resistance range to ensure compatibility with the intended load resistance and bias conditions for optimal performance.
RF Diode Part Context
This part belongs to the Skyworks silicon Schottky barrier diode family, which includes both beam-lead and universal chip configurations. These devices are engineered for high-frequency applications through the Ka band. The CDP7624-000 specifically utilizes N-type silicon, distinguishing it from the P-type variants optimized for low 1/f noise in detector applications.
RF Diode Replacement Considerations
CDF7621-000 is an N-type K-band alternative. CDF7623-000 serves as an N-type X-band option. CDB7620-000 is a P-type Ku-band universal chip. Verify electrical parameters such as video resistance and capacitance when substituting.
Explore related parts through Diodes, Discrete Semiconductor Products, all product categories, ChipApex homepage.
