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Product Detailed Parameters
- Description：MOSFET N-CH 20V 100MA SOT883
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
- Rds On (Max) @ Id, Vgs：3Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.57 nC @ 4.5 V
- Vgs (Max)：10V
- Input Capacitance (Ciss) (Max) @ Vds：9 pF @ 3 V
- FET Feature：-
- Power Dissipation (Max)：100mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-883
- Package / Case：SC-101, SOT-883
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Overview
The Central Semiconductor Corp CEDM7001 BK PBFREE is a surface-mount silicon N-channel enhancement-mode MOSFET manufactured via the N-Channel DMOS process. It features a SOT-883L package with a maximum height of 0.40 mm. Key electrical parameters include a Drain-Source Voltage (VDS) of 20 V, Gate-Source Voltage (VGS) of 10 V, and Continuous Drain Current (ID) of 100 mA at 25°C. The device offers a low on-resistance (rDS(ON)) ranging from 0.9 to 3.0 Ω at VGS=4.0V and ID=10mA, with a threshold voltage (VGS(th)) between 0.6 V and 0.9 V. Power dissipation is rated at 100 mW, and it operates within a junction temperature range of -65°C to +150°C.
Feature Summary
- Designed for high-speed pulsed amplifier and driver applications
- Features logic level compatibility and low threshold voltage
- Utilizes a small leadless surface mount package with a 0.4mm profile
Applications
- Load and power switches
- DC-DC converters
- Battery-powered portable equipment
Procurement Notes
Verify that the specific part number includes the "BK" designation, as datasheet documentation primarily references the standard CEDM7001 item number. Confirm RoHS compliance status associated with the "PBFREE" suffix directly with the manufacturer or authorized distributors. Ensure ordering specifications match the required plating options, noting that alternative Tin/Lead plating requires a distinct suffix. Cross-reference the marking code "H" to validate component authenticity upon receipt.
Selection Notes
Select this component when a compact N-channel MOSFET with low gate charge and fast switching speeds is required. The low rDS(ON) makes it suitable for efficient power management in space-constrained designs. Consider the complementary P-channel device, CEDM8001, if push-pull configurations are necessary. Evaluate the thermal performance against the 100 mW dissipation limit for the specific SOT-883L package.
Part Context
This component belongs to the Central Semiconductor surface-mount MOSFET family, specifically engineered for low-power switching tasks. It shares the same pinout and general characteristics with variants like the CEDM7001VL, which utilizes a thinner SOT-883VL package. The device is part of a broader portfolio including current regulators and transient voltage suppressors offered by the manufacturer.
Replacement Considerations
The official complementary P-channel substitute is the CEDM8001. For direct replacements, verify pin compatibility and electrical ratings against other SOT-883 packaged N-channel MOSFETs with similar 20V VDS and 100mA ID capabilities.
