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Product Detailed Parameters
- Description：MOSFET P-CH 20V 100MA SOT883
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
- Rds On (Max) @ Id, Vgs：8Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.66 nC @ 4.5 V
- Vgs (Max)：10V
- Input Capacitance (Ciss) (Max) @ Vds：45 pF @ 3 V
- FET Feature：-
- Power Dissipation (Max)：100mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-883
- Package / Case：SC-101, SOT-883
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Overview
The CEDM8001 is a surface-mount silicon P-channel enhancement-mode MOSFET manufactured using a P-Channel DMOS process. Designed for high-speed pulsed amplifier and driver applications, it features low on-resistance and low threshold voltage. Key electrical parameters include a drain-source voltage of 20 V, gate-source voltage of 10 V, continuous drain current of 100 mA, and power dissipation of 100 mW. The device operates within a junction temperature range of -65 to +150 °C.
Feature Summary
- Logic level compatible design with low threshold voltage
- Low rDS(ON) characteristics for efficient switching
- Small leadless surface mount package with 0.4mm profile
Applications
- Load and power switches
- DC-DC converters
- Battery-powered portable equipment
Procurement Notes
Verify the specific package variant required, as the CEDM8001 designation corresponds to the SOT-883L outline. Confirm plating options; standard ordering implies Pb-free status unless otherwise specified. Ensure the application environment remains within the -65 to +150 °C operating temperature range. Cross-reference the complementary N-channel part number if an H-bridge configuration is needed.
Selection Notes
Select this component for compact designs requiring P-channel switching at low voltages. The 100 mA continuous current rating suits low-power logic interfaces. Consider the 0.4mm height for strict vertical space constraints. Evaluate thermal management needs against the 100 mW dissipation limit in enclosed environments.
Part Context
This device belongs to Central Semiconductor's line of surface-mount enhancement-mode MOSFETs. It is the P-channel counterpart to the CEDM7001 N-channel device. The product utilizes a leadless surface mount package suitable for automated assembly processes in consumer and industrial electronics.
Replacement Considerations
The complementary N-channel equivalent is the CEDM7001. For different package profiles, consider the CEDM8001VL (SOT-883VL). Higher power variants are available in SOT-953 or SOT-523 packages under the CMNDM8001 and CMUDM8001 designations.
