CEDM8004VL TR PBFREE

CEDM8004VL TR PBFREE

$0.34
  • Description:MOSFET P-CH 30V 450MA SOT883VL
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:eaee4c7eb54d Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET P-CH 30V 450MA SOT883VL
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:450mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:1.1Ohm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.88 nC @ 4.5 V
  • Vgs (Max):8V
  • Input Capacitance (Ciss) (Max) @ Vds:55 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):100mW (Ta)
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-883VL
  • Package / Case:SC-101, SOT-883

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CEDM8004VL TR PBFREE

Overview

The CEDM8004VL TR PBFREE is a surface-mount silicon P-channel enhancement-mode MOSFET manufactured via the P-Channel DMOS process. It features a SOT-883VL package with a 0.32mm profile and offers low rDS(ON) and low threshold voltage for high-speed pulsed amplifier and driver applications. Key electrical parameters include a Drain-Source Voltage (VDS) of 30 V, Gate-Source Voltage (VGS) of 8.0 V, Continuous Drain Current (ID) of 450 mA, and Power Dissipation (PD) of 100 mW at 25°C ambient temperature.

Feature Summary

  • ESD protection up to 2kV
  • Logic level compatible operation
  • Small leadless surface mount package

Applications

  • Load/Power switches
  • Power supply converter circuits
  • Battery powered portable devices

Procurement Notes

Verify current availability status as Central Semiconductor has issued discontinuation notices for specific SOT-883VL package variants. Confirm if the requested suffix aligns with stock-only or End-of-Life classifications. Contact [email protected] for alternate sourcing assistance if standard inventory is depleted.

Selection Notes

Select this component for designs requiring a compact P-channel MOSFET with low threshold voltage suitable for logic-level driving. Ensure the application operates within the specified 30 V drain-source and 450 mA continuous drain limits. Verify thermal management requirements against the 100 mW power dissipation rating in the small outline package.

Part Context

This device belongs to the CEDM series of surface-mount enhancement-mode MOSFETs from Central Semiconductor Corp. It serves as the complementary P-channel counterpart to the N-channel CEDM7004VL. The part utilizes the SOT-883VL case configuration, which provides a very low profile compared to standard small outline packages.

Replacement Considerations

Official replacement part numbers are listed as N/A in the manufacturer's Product Discontinuation Notice (PDN01168). No direct substitute is provided by Central Semiconductor for this discontinued item.

CEDM8004VL TR PBFREECEDM8004VL TR PBFREE
$0.34
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