CEZ6R40SL-HF

CEZ6R40SL-HF

  • Description:MOSFET N-CH 65V 27A/93A PPAK
  • Series:-
  • Mfr:Comchip Technology
  • Package:Tape & Reel (TR)

SKU:9bb912a8266b Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 65V 27A/93A PPAK
  • Series:-
  • Mfr:Comchip Technology
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):65 V
  • Current - Continuous Drain (Id) @ 25°C:27A (Ta), 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:4.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:26 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1790 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):73W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:P-PAK (5x6)
  • Package / Case:8-PowerTDFN

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CEZ6R40SL-HF

Overview

The CEZ6R40SL-HF is a 65V N-Channel Power MOSFET manufactured by Comchip Technology. It features a continuous drain current of 27A at ambient temperature and 93A at case temperature, with a maximum power dissipation of 73W at case temperature. The device utilizes a surface-mount P-PAK (5x6) package. Key electrical characteristics include a drain-source resistance ranging from 3.6 to 7.4 milliohms. This component is engineered for high-efficiency power conversion applications requiring robust thermal performance and low on-resistance.

Feature Summary

  • N-Channel configuration optimized for high-efficiency power conversion
  • Low drain-source resistance range of 3.6 to 7.4 milliohms
  • Surface-mount P-PAK (5x6) package design
  • High thermal capability supporting up to 93A case temperature current

Applications

  • High-efficiency power conversion systems
  • DC-DC converter circuits
  • Power management modules

Procurement Notes

Verify the specific datasheet version for precise thermal resistance values and absolute maximum ratings before integration. Confirm that the P-PAK (5x6) footprint matches the target PCB layout. Ensure thermal management strategies align with the 73W dissipation limit at case temperature. Cross-reference pinout diagrams to prevent installation errors during assembly.

Selection Notes

Select this component when a 65V N-Channel MOSFET with low on-resistance is required for compact power designs. The P-PAK package suits automated surface-mount processes. Evaluate thermal constraints carefully, as the 27A rating applies only at ambient temperature, while higher currents require adequate case cooling. Compare against alternatives based on specific switching speed and gate charge requirements.

Part Context

Comchip Technology specializes in discrete semiconductors, including Schottky diodes, rectifiers, and MOSFETs. The CEZ6R40SL-HF belongs to their power transistor lineup, designed for modern electronics demanding efficiency and reliability. The manufacturer emphasizes innovative packaging solutions like the P-PAK to enhance thermal performance and facilitate high-volume manufacturing processes.

FAQ

What is the maximum power dissipation of the CEZ6R40SL-HF?

The maximum power dissipation is 73W when measured at case temperature.

What package type does the CEZ6R40SL-HF use?

It uses a surface-mount P-PAK package with dimensions of 5x6 mm.

CEZ6R40SL-HFCEZ6R40SL-HF

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