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The CG2H40025F is a gallium nitride (GaN) high electron mobility transistor (HEMT) from MACOM Technology Solutions, housed in the 440166 solder-down pill package. It operates from a 28 V rail and supports frequencies up to 6 GHz. Key electrical characteristics include a typical small signal gain of 17 dB at 2.0 GHz and 15 dB at 4.0 GHz. The device delivers a typical saturated output power (PSAT) of 30 W with a drain efficiency of 70% at PSAT. Absolute maximum ratings specify a drain-source voltage of 120 V and an operating junction temperature up to 225 °C.
Verify the specific ordering suffix 'F' corresponds to the 440166 solder-down pill package rather than the 440196 flange package. Confirm that the required application environment accommodates the specified maximum case operating temperature range of -40 °C to +150 °C. Ensure proper handling procedures are followed due to the electrostatic discharge classification levels defined by JEDEC standards.
Select this component when designing linear or compressed amplifier circuits requiring high gain and wide bandwidth. The device is optimized for 28 V operation and provides significant power density. Designers must account for the specific source and load impedances provided in the datasheet to achieve optimal performance across the frequency range.
This part belongs to the CG2H40025 family, which includes both the F variant (solder-down pill) and the P variant (screw-down flange). Both variants share identical electrical specifications but differ in their physical mounting configurations. The CG2H40025F is specifically designed for surface mount assembly processes.
The CG2H40025P serves as the direct functional equivalent within the same family, offering identical electrical performance in a screw-down flange package. When replacing the CG2H40025F, designers must adapt the mechanical layout and thermal interface to accommodate the different package type.