CG2H80060D-GP4

Overview

The CG2H80060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) die designed for high-power RF applications up to 8.0 GHz. It operates at a drain-source voltage of 28 V with a breakdown voltage of 120 V. The device delivers a typical saturated output power (PSAT) of 60 W and a drain efficiency of 65% at 4 GHz. Small signal gain is typically 15 dB at 4 GHz and 12 dB at 8 GHz. Key electrical parameters include a gate threshold voltage ranging from -3.8 V to -2.3 V, a maximum forward gate current of 15 mA, and a maximum drain current of 6 A. The junction-to-case thermal resistance is 1.5 °C/W for the bare die.

Feature Summary

• High power density and wide bandwidth capabilities enabled by GaN material properties
• High breakdown voltage supporting robust operation under mismatched load conditions
• High temperature operation capability suitable for demanding thermal environments
• Large signal models available for ADS and MWO simulation tools

Applications

• Broadband amplifiers
• Cellular infrastructure
• Class A, AB linear amplifiers for OFDM, W-CDMA, EDGE, CDMA waveforms
• Test instrumentation
• 2-Way private radio systems

Procurement Notes

Verify the specific revision status of the datasheet before finalizing design specifications, as MACOM reserves the right to modify product information without notice. Confirm that the procurement channel provides genuine MACOM Technology Solutions products. Ensure handling procedures account for the bare die format and Gel-Pak packaging to prevent electrostatic discharge damage during storage and assembly.

Selection Notes

Select this component when designing broadband RF power stages requiring high efficiency and linearity up to 8 GHz. Consider the 1.5 °C/W thermal resistance for heat sink design calculations. Verify compatibility with AuSn eutectic soldering processes and gold wire bonding requirements. Ensure the application circuit can handle the specified 10:1 VSWR output mismatch stress without damaging the device.

Part Context

This part belongs to MACOM's portfolio of GaN-on-SiC HEMT devices, leveraging the superior thermal conductivity and electron drift velocity of Gallium Nitride compared to silicon or gallium arsenide alternatives. The CG2H80060D represents a bare die solution intended for integration into custom modules or multi-chip modules rather than standalone packaged components.

Replacement Considerations

No official substitute part numbers are listed in the documentation. When evaluating alternatives, compare small-signal gain profiles, saturated output power levels, and thermal resistance characteristics. Ensure any replacement supports the required 28 V operating voltage and compatible wire bonding pad configurations.