CGD65A055SH2

$10.71

Description：650V GAN HEMT, 55MOHM, DFN8X8. W
Series：ICeGaN™ H2
Mfr：Cambridge GaN Devices
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4aae2fbe1127 Category: Single FETs, MOSFETs Brand: Cambridge GaN Devices

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Product introduction

Product Detailed Parameters

Description：650V GAN HEMT, 55MOHM, DFN8X8. W
Series：ICeGaN™ H2
Mfr：Cambridge GaN Devices
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：27A
Drive Voltage (Max Rds On, Min Rds On)：12V
Rds On (Max) @ Id, Vgs：77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id：4.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：4 nC @ 12 V
Vgs (Max)：+20V, -1V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：16-DFN (8x8)
Package / Case：16-PowerVDFN

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CGD65A055SH2

Overview

The CGD65A055SH2 is a surface-mount N-channel enhancement-mode Gallium Nitride High Electron Mobility Transistor (HEMT) from Cambridge GaN Devices. It features a 650 V breakdown voltage and a maximum continuous drain current of 27 A. The device utilizes a compact 16-DFN package with dimensions of 8x8 mm, designed for high-power density applications. Key electrical characteristics include a low on-resistance to minimize conduction losses and optimized gate charge for efficient switching performance in power conversion systems.

Feature Summary

Enhancement-mode operation compatible with standard silicon gate drivers without requiring negative voltage for turn-off
Integrated intelligent temperature control for internal gate terminal to enhance reliability
Low on-resistance reduces thermal management requirements within the powertrain
High electron mobility structure enables fast switching rates and reduced dynamic losses

Applications

Electric vehicle traction inverters
On-board chargers
DC-DC converters
Industrial motor drives

Procurement Notes

Verify the specific suffix SH2 against the official Cambridge GaN Devices datasheet to confirm pinout and thermal pad configuration. Ensure compatibility with recommended gate driver circuits for e-mode GaN devices. Check for RoHS compliance status and lead-free soldering specifications prior to integration into production assemblies.

Selection Notes

Select this component for designs requiring high efficiency and reduced system size in automotive or industrial environments. Evaluate thermal resistance capabilities relative to the PCB layout. Confirm that the 650 V rating provides sufficient margin for the target application's bus voltage and transient spikes.

Part Context

This device belongs to the ICeGaN product family, representing an integrated enhancement-mode GaN platform. Unlike depletion-mode alternatives, it offers ease of use by operating with positive gate voltages only. The technology aims to improve power conversion efficiency while lowering emissions intensity through advanced semiconductor processing.