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Product Detailed Parameters
- Description：650V GAN HEMT, 130MOHM, DFN8X8.
- Series：ICeGaN™
- Mfr：Cambridge GaN Devices
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：-
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：12V
- Rds On (Max) @ Id, Vgs：182mOhm @ 900mA, 12V
- Vgs(th) (Max) @ Id：4.2V @ 4.2mA
- Gate Charge (Qg) (Max) @ Vgs：2.3 nC @ 12 V
- Vgs (Max)：+20V, -1V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：Current Sensing
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：16-DFN (8x8)
- Package / Case：16-PowerVDFN
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Overview
The CGD65A130S2-T13 is a Gallium Nitride (GaN) power integrated circuit from the ICeGaN P2 series, manufactured by Cambridge GaN Devices. It features an enhanced-mode (eMode) transistor architecture with a breakdown voltage of 650 V and a maximum drain-source on-resistance (RDS(on)) of 130 mΩ. The device utilizes a DHDFN-9-1 dual-heatsink DFN package to optimize thermal performance and PCB layout for high-power applications. Designed for use in data centers, motor drives, and industrial power supplies, it integrates Miller clamping and supports standard silicon gate drivers without requiring negative voltages for turn-off.
Feature Summary
- Integrated Miller clamping to eliminate breakdown losses during high-speed switching
- Zero-volt turn-off capability to minimize reverse conduction losses
- Dual-heatsink DHDFN-9-1 package design for optimized thermal resistance and parallel scalability
- Compatible with standard MOSFET or IGBT gate drivers, eliminating the need for negative drive voltages
Applications
- Data center power systems
- Motor control inverters
- Industrial power supplies
Procurement Notes
Verify the specific suffix 'T13' against official Cambridge GaN Devices documentation to confirm reel packaging specifications. Ensure compatibility with the DHDFN-9-1 footprint and thermal requirements for your target application. Cross-reference the 130 mΩ RDS(on) rating with the official datasheet to confirm it matches the intended current handling needs for multi-kW designs.
Selection Notes
Select this component when designing high-efficiency power solutions that require integration of gate drive functions and advanced thermal management. The ICeGaN P2 series is suitable for applications demanding reduced system complexity and cost compared to discrete eMode GaN devices. Consider its compatibility with standard silicon drivers if minimizing external driver circuitry is a priority.
Part Context
This part belongs to the ICeGaN P2 series, a line of high-energy-efficiency GaN power ICs developed by Cambridge GaN Devices. The series targets high-power applications such as data centers and industrial inverters, offering superior performance over discrete eMode GaN transistors through integrated protection features and advanced packaging technologies.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Cambridge GaN Devices technical support for direct replacements or pin-compatible alternatives within the ICeGaN portfolio.
