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Product Detailed Parameters
- Description：650V GAN HEMT, 130MOHM, DFN5X6.
- Series：ICeGaN™
- Mfr：Cambridge GaN Devices
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：12A
- Drive Voltage (Max Rds On, Min Rds On)：12V
- Rds On (Max) @ Id, Vgs：182mOhm @ 900mA, 12V
- Vgs(th) (Max) @ Id：4.2V @ 4.2mA
- Gate Charge (Qg) (Max) @ Vgs：1.9 nC @ 12 V
- Vgs (Max)：+20V, -1V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-DFN (5x6)
- Package / Case：8-PowerVDFN
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Overview
The CGD65B130SH2 is a Gallium Nitride (GaN) power transistor manufactured by Cambridge GaN Devices. It belongs to the ICeGaN family, which integrates an enhancement-mode GaN HEMT with on-chip gate drive and protection circuitry. This integration allows the device to be driven using standard silicon gate drivers without requiring negative voltage for turn-off. The component is designed for high-efficiency power conversion applications, offering low on-resistance and reduced switching losses compared to traditional silicon MOSFETs.
Feature Summary
- Integrated enhancement-mode GaN technology with built-in intelligent temperature control
- Compatible with standard silicon gate drivers, eliminating the need for negative bias voltages
- On-chip protection features including over-current and over-temperature sensing
Applications
- Electric vehicle (EV) powertrains and inverters
- High-density DC-DC converters
- Industrial motor drives
Procurement Notes
Verify the specific suffix 'H2' against the manufacturer's current datasheet to confirm pinout and thermal pad configuration. Ensure the selected gate driver supports the required voltage levels for this enhancement-mode device. Confirm RoHS compliance status as per the latest official documentation before procurement.
Selection Notes
Select this component when system design requires simplified gate driving circuits and enhanced reliability through integrated protection. It is suitable for applications where reducing external component count and improving power density are critical priorities. Evaluate thermal management requirements based on the specific package type and operating conditions.
Part Context
Cambridge GaN Devices specializes in advanced GaN power semiconductors. The ICeGaN platform distinguishes itself by combining the performance of GaN with the ease of use of silicon devices. This approach aims to accelerate adoption in automotive and industrial sectors by removing complexity associated with traditional GaN implementation.
Replacement Considerations
Direct replacements may include other ICeGaN variants from Cambridge GaN Devices or comparable enhancement-mode GaN transistors from manufacturers like Infineon or STMicroelectronics. Verify that any substitute maintains compatibility with existing gate driver designs and meets the same electrical specifications.
