CGD65B200S2-T13

Overview

The CGD65B200S2-T13 is an enhancement mode GaN-on-silicon power transistor featuring ICeGaN™ gate technology and integrated current sensing. It offers a 650 V drain-to-source blocking voltage, 8.5 A continuous drain current, and a typical on-resistance of 200 mΩ at 25 °C. The device operates with a gate drive voltage range of 9 V to 20 V and includes a Kelvin source contact for accurate switching control. Packaged in a bottom-side cooled DFN 5x6 mm SMD format, it supports high-frequency operation with low thermal resistance.

Feature Summary

• ICeGaN™ gate technology provides high threshold stability and compatibility with standard silicon MOSFET drivers without requiring negative voltages.
• Integrated current sense function eliminates the need for external sense resistors, reducing component count and efficiency losses.
• Kelvin source contact ensures precise gate drive reference potential for reliable high-speed switching performance.
• Bottom-side cooled DFN package design facilitates direct soldering to ground planes for optimized thermal dissipation.

Applications

• Mobile chargers and fast-chargers
• AC adapters and notebook adapters
• Industrial SMPS and inverters
• PV micro-inverters
• Class-D Audio amplifiers

Procurement Notes

Verify that the ordering suffix matches the required tape and reel packaging configuration. Confirm the specific revision level against the manufacturer's latest documentation to ensure alignment with current manufacturing standards. Cross-reference the absolute maximum ratings with your system's transient conditions to prevent exceeding the specified limits during operation.

Selection Notes

Select this component when designing circuits requiring high switching frequencies and simplified thermal management. The integrated current sensing capability makes it suitable for applications where board space is limited or where removing external sense resistors improves overall system efficiency. Ensure the gate driver supports the recommended 9 V to 20 V operating window.

Part Context

This device belongs to the Cambridge GaN Devices ICeGaN™ family of enhancement mode transistors. These components utilize proprietary gate technology to mimic standard silicon MOSFET behavior while delivering superior dynamic performance. The series targets high-efficiency power conversion systems by combining wide bandgap material properties with user-friendly driving requirements.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided datasheet.

FAQ

How does the integrated current sense function operate?

The device includes a dedicated current sense output pin relative to the source. This internal feature removes the necessity for external sense resistors, thereby eliminating associated efficiency losses and simplifying the thermal design by allowing direct connection to large copper areas.

What is the recommended gate drive voltage range?

The recommended gate drive voltage (VGS in on-state) ranges from 9 V to VDD. The ICeGaN™ gate supply voltage (VDD) should be maintained between 9 V and 20 V, typically set at 12 V, to ensure proper operation and compatibility with various controllers.

Does the device require negative gate voltages for shutdown?

No. An integrated Miller Clamp within the ICeGaN™ gate technology eliminates the need for negative gate voltages for shutdown, allowing direct integration with standard positive-only gate drivers and controllers.