CGH21240F

CGH21240F

$595.93
  • Description:RF MOSFET HEMT 28V 440117
  • Series:GaN

SKU:0ef11f7419f1 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET HEMT 28V 440117
  • Series:GaN
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Technology:HEMT
  • Frequency:1.8GHz ~ 2.3GHz
  • Gain:15dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1:00 AM
  • Power - Output:240W
  • Voltage - Rated:84 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:440117
  • Supplier Device Package:440117
  • Configuration:-

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CGH21240F

Overview

The CGH21240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for 1.8 to 2.3 GHz operation. It provides a typical gain of 15 dB and delivers 240 W of saturated output power at 28 V drain bias. The device features a ceramic/metal flange package (Type 440117) and supports up to 115 W of power dissipation. It achieves a pulsed drain efficiency of 65% and maintains an ACLR of -35 dBc at 40 W average output power under WCDMA modulation.

Feature Summary

  • High efficiency and wide bandwidth capabilities optimized for linear amplifier applications
  • Robust performance with high degree of digital pre-distortion correction compatibility
  • Large signal models available for ADS and MWO simulation environments

Applications

  • WCDMA amplifier systems
  • LTE amplifier systems
  • WiMAX amplifier systems

Procurement Notes

Verify the specific package type 440117 against your mechanical design constraints before ordering. Confirm that your thermal management solution can handle the specified 115 W power dissipation rating. Ensure your test equipment supports the required 28 V drain voltage and 1.0 A quiescent current conditions for accurate characterization.

Selection Notes

Select this component when designing amplifiers requiring high linearity in the 1.8 to 2.3 GHz band. Consider the need for external matching networks if not using the demonstration circuit. Evaluate the requirement for DPD correction to optimize spectral purity while maintaining high drain efficiency during continuous wave or modulated operation.

Part Context

This part belongs to MACOM's GaN HEMT portfolio, specifically engineered for broadband wireless infrastructure. It utilizes silicon carbide substrates to support high power density and thermal conductivity. The device is distinct from lower-power variants by its ability to deliver hundreds of watts of RF output power in a single die configuration.

Replacement Considerations

Consult official MACOM documentation for direct pin-compatible substitutes. Verify that any alternative device matches the 440117 package dimensions and electrical characteristics such as breakdown voltage and thermal resistance.

CGH21240FCGH21240F
$595.93
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