CGH35015F

Overview

The CGH35015F is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) manufactured by MACOM Technology Solutions. It operates within the frequency range of 3.3 GHz to 3.9 GHz and is rated for a drain voltage of 28 V. The device delivers an output power of 15 W with a small-signal gain of 12 dB. Designed for surface mount installation, it utilizes the 440196 package configuration.

Feature Summary

• Utilizes GaN HEMT technology for high efficiency and broadband capability
• Optimized for fixed access applications in the 3.3–3.9 GHz band
• Features surface mount packaging for integration into amplifier designs

Applications

• WiMAX fixed access amplifiers
• Broadband Wireless Access (BWA) systems
• RF power amplifier stages

Procurement Notes

Verify component status as the part may be discontinued or subject to production change notifications. Confirm package integrity and RoHS compliance against current manufacturer documentation before procurement. Ensure compatibility with existing thermal management solutions due to the specific surface mount requirements of the 440196 housing.

Selection Notes

Select this component for designs requiring high linearity and power density in the 3.3–3.9 GHz spectrum. Evaluate thermal resistance characteristics suitable for the 440196 surface mount footprint. Compare performance metrics against alternative GaN devices if higher frequency operation or different voltage ratings are required for the target application architecture.

Part Context

This device belongs to the CGH35015 series of GaN transistors designed specifically for WiMAX and BWA markets. It represents MACOM's focus on silicon-based GaN technologies for cost-effective, high-performance RF solutions. The F suffix denotes the specific surface mount variant within the broader product family.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.