CGH35240F

Overview

The CGH35240F is a gallium nitride (GaN) amplifier designed for high efficiency and wide bandwidth. It operates within the 3.1 to 3.5 GHz frequency range with a saturated power output of 240 W. The device features an internal 50 Ω match, large signal gain of 11.6 dB, and drain efficiency of 57%. Supplied in a ceramic/metal flange package (440201), it supports high-temperature operation up to +150°C and junction temperatures up to +225°C.

Feature Summary

• High-efficiency GaN technology optimized for S-Band radar applications
• Internally matched to 50 Ω for simplified circuit integration
• Robust thermal performance supporting high-temperature operations

Applications

• General amplification
• S-Band RADAR systems

Procurement Notes

Verify component authenticity through authorized MACOM channels or certified distributors. Confirm RoHS compliance status and check for recent Product Change Notifications (PCNs). Ensure handling procedures strictly follow electrostatic discharge (ESD) precautions due to device sensitivity. Validate that the specific ordering suffix matches the required sample board configuration if applicable.

Selection Notes

Select this component for designs requiring high output power and efficiency in the 3.1–3.5 GHz band. Ensure the application environment accommodates the specified operating temperature range and thermal resistance requirements. Verify biasing sequences carefully to prevent damage during startup and shutdown phases.

Part Context

This part belongs to MACOM's GaN on Silicon Carbide (GaN-on-SiC) amplifier family. It utilizes advanced semiconductor processes to deliver industry-leading gain and power density. The device is distinct from discrete transistors as it includes integrated matching networks for immediate RF deployment.

Replacement Considerations

CGH35240F-AMP