CGH40180PP

Overview

The CGH40180PP is an unmatched Gallium Nitride (GaN) high electron mobility transistor (HEMT) designed for RF and microwave applications. Operating from a 28-volt rail, it delivers up to 220 W typical saturated power output (PSAT) with 70% efficiency at PSAT. The device supports operation up to 2.5 GHz, providing 20 dB small signal gain at 1.0 GHz and 15 dB at 2.0 GHz. It features a 4-lead flange package (440199), a drain-source breakdown voltage of 84 V, and a maximum operating junction temperature of 225 °C.

Feature Summary

• High-efficiency GaN HEMT technology enabling broadband performance
• Capable of linear and compressed amplifier circuit configurations
• Large signal models available for ADS and MWO simulation environments

Applications

• Broadband amplifiers
• Cellular infrastructure
• Test instrumentation
• Class A and AB amplifiers suitable for OFDM, W-CDMA, EDGE, and CDMA waveforms

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that thermal management solutions accommodate the specified junction-to-case thermal resistance and maximum case operating temperatures under intended load conditions. Ensure electrostatic discharge handling protocols align with the component's classification levels.

Selection Notes

Select this component for designs requiring high power density and wide bandwidth in the sub-3 GHz range. Evaluate thermal dissipation requirements carefully, as the device operates efficiently at high power levels. Consider the availability of large-signal models for accurate circuit simulation prior to prototyping.

Part Context

This part belongs to MACOM's portfolio of GaN on Silicon Carbide (GaN-on-SiC) transistors. These devices are engineered to provide industry-leading gain, efficiency, and power capabilities compared to traditional semiconductor technologies. The CGH40180PP specifically targets general-purpose broadband solutions within this family.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided source material.