CGH55030F1

Overview

The CGH55030F1 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for high efficiency, gain, and wide bandwidth. It operates in the 5.5-5.8 GHz range with a 30 W peak power capability and 10 dB small signal gain. The device supports 300 MHz instantaneous bandwidth and achieves 25% drain efficiency at 4 W average power. It utilizes package type 440166.

Feature Summary

• Designed specifically for high efficiency, high gain, and wide bandwidth capabilities
• Capable of handling 30 W peak power with 300 MHz instantaneous bandwidth
• Suitable for multi-carrier applications requiring low error vector magnitude

Applications

• WiMAX Fixed Access 802.16-2004 OFDM Applications
• Multi-carrier DOCSIS Applications
• Broadband Wireless Access (BWA) amplifier applications

Procurement Notes

Verify the specific package configuration against the datasheet before procurement. Confirm that the ordering suffix matches the required physical form factor. Ensure compatibility with the intended operating voltage and thermal management requirements. Cross-reference the part number with official manufacturer documentation to avoid counterfeit components.

Selection Notes

Select this component when designing amplifiers for WiMAX or DOCSIS systems requiring high linearity and efficiency. Consider the 440166 package dimensions for PCB layout. Evaluate thermal resistance and case temperature limits for reliable operation under maximum power dissipation conditions.

Part Context

This GaN HEMT belongs to MACOM's portfolio of radio frequency power transistors. It is engineered to replace older technologies in broadband wireless infrastructure. The device offers improved performance metrics compared to previous generation silicon-based alternatives.

Replacement Considerations

CGH55030P1

FAQ

What is the primary difference between the CGH55030F1 and CGH55030P1?

The primary difference lies in the package type. The CGH55030F1 uses the 440166 solder-down pill package, while the CGH55030P1 uses the 440196 screw-down flange package.

Can the CGH55030F1 be used for frequencies below 5.5 GHz?

Yes, based on appropriate external match adjustment, the transistor is suitable for 4.9 - 5.5 GHz applications as well.

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDSS) rating is 120 V at a case temperature of 25°C.