ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF MOSFET HEMT 28V DIE
- Series：GaN
- Mfr：MACOM Technology Solutions
- Package：Tray
- Technology：HEMT
- Frequency：6GHz
- Gain：15dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：200 mA
- Power - Output：15W
- Voltage - Rated：84 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：Die
- Supplier Device Package：Die
- Configuration：-
Download product information
Overview
The CGH60015D-GP4 is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) die manufactured by MACOM Technology Solutions. It operates within a frequency range of 0 to 6000 MHz, delivering an output power of 15 W with a gain of 12 dB. The device features a drain-source breakdown voltage of 120 V and supports a continuous drain current of 1.5 A. Designed for high-power RF applications, it utilizes a bare die package configuration suitable for integration into custom amplifier modules.
Feature Summary
- Utilizes GaN HEMT technology for high-efficiency power amplification
- Supports broadband operation from DC up to 6 GHz
- Engineered for high output power density in a compact die format
Applications
- Broadband power amplifier modules
- Military radar systems
- Electronic warfare equipment
- Test and measurement instrumentation
Procurement Notes
Verify the specific datasheet revision and application notes provided by MACOM before integration. Ensure thermal management solutions are compatible with bare die mounting requirements. Confirm that the design accounts for the specified 120 V breakdown voltage and 1.5 A current limits to prevent device failure during operation.
Selection Notes
Select this component when designing wideband amplifiers requiring 15 W output at frequencies up to 6 GHz. Consider the bare die form factor for custom PCB or substrate integration. Evaluate thermal dissipation capabilities and impedance matching networks to optimize performance within the specified voltage and current parameters.
Part Context
This part belongs to MACOM's CGH series of GaN HEMTs, which are designed for high-power RF applications. The 'D' suffix typically indicates a die configuration, while 'GP4' denotes the specific product generation and packaging style. These devices are commonly used in defense and aerospace sectors where high reliability and bandwidth are critical.
Replacement Considerations
Consult MACOM official documentation for qualified replacement parts or updated revisions of the CGH60015D series. Verify electrical compatibility and pinout equivalence if substituting with other GaN HEMT dies from different manufacturers.
