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Product Detailed Parameters
- Description：LINEAR IC
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tray
- Technology：-
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- Voltage - Rated：-
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Overview
The CGHV1J006D-GP5 is a high-voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate. It utilizes a 0.25 μm process technology and operates from DC to 18 GHz. The device delivers 6W of output power with a 1.2mm gate width. Designed for high-efficiency performance, it supports applications requiring robust RF power generation in the microwave frequency range.
Feature Summary
- High-voltage GaN HEMT architecture on silicon carbide substrate
- 0.25 μm process technology for enhanced high-frequency operation
- Capable of delivering 6W output power at frequencies up to 18 GHz
Applications
- Microwave radio links
- Electronic warfare systems
- Test and measurement equipment
Procurement Notes
Verify the specific GP5 suffix against the manufacturer datasheet to confirm exact die specifications and handling requirements. Ensure compatibility with existing thermal management solutions due to the high-power density of the GaN HEMT structure. Confirm that the silicon carbide substrate characteristics align with the intended circuit design parameters.
Selection Notes
Select this component when high efficiency and wide bandwidth are required in the 10 MHz to 18 GHz range. The 6W output capability suits applications needing moderate power levels without excessive heat dissipation challenges compared to higher-power variants. Consider the 1.2mm gate width for impedance matching network design constraints.
Part Context
This part belongs to MACOM's CGHV series of GaN-on-SiC transistors. These devices are engineered for demanding RF applications where traditional silicon technologies may lack sufficient power density or efficiency. The series provides a scalable solution for various microwave frequency bands.
Replacement Considerations
Consult official MACOM documentation for direct cross-references. Alternative parts must match the 18 GHz maximum frequency and 6W power output while maintaining GaN-on-SiC construction for equivalent thermal and electrical performance.
