CGHV40180P

Overview

The CGHV40180P is an unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed for general-purpose broadband RF and microwave applications. Operating from a 50-volt rail, it delivers up to 2.0 GHz operation with a typical small signal gain of 24 dB at 900 MHz. The device provides 250 W typical output power at 900 MHz with 75% efficiency at PSAT. It features a 150 V drain-source voltage rating and operates within a case temperature range of -40°C to +150°C.

Feature Summary

• High efficiency and wide bandwidth capabilities suitable for linear and compressed amplifier circuits
• Unmatched GaN HEMT technology offering high gain across the DC to 2.0 GHz spectrum
• Robust performance under mismatched load conditions with specified VSWR tolerance

Applications

• Military communications systems
• Public safety VHF-UHF applications
• Radar systems
• Broadband amplifiers

Procurement Notes

Verify the specific package type 440206 and ensure compatibility with the required thermal management solutions. Confirm that the application circuit design accounts for the absolute maximum ratings, particularly the 150V drain-source voltage and operating junction temperature limits. Check for availability of the CGHV40180P-AMP test board if evaluation is required prior to final deployment.

Selection Notes

Select this component for designs requiring high power density and broad frequency coverage up to 2.0 GHz. Ensure the biasing network supports the specified gate threshold and quiescent voltages. Consider the thermal resistance characteristics when designing the heat sinking interface to maintain reliable operation within the specified case temperature range.

Part Context

This part belongs to MACOM's CGHV series of GaN on Silicon Carbide transistors. It is distinct from the CGHV40180F variant by its package type and specific electrical characterization. The device is engineered to provide industry-leading gain and efficiency for demanding RF power applications.

Replacement Considerations

Consult official documentation for direct substitutes. The CGHV40180F is a related model but differs in packaging and potentially in detailed electrical parameters; verify compatibility before substitution.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDSS) rating is 150 Volts at a case temperature of 25 °C.

Is the device stable at low frequencies?

When operating at low frequencies, a series resistor should be used to maintain amplifier stability.

What is the typical output power at 900 MHz?

The typical output power at 900 MHz is 250 Watts when measured in the application circuit.