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Product Detailed Parameters
- Description：RF MOSFET GAN HEMT 50V CDFM2
- Series：-
- Mfr：Ampleon USA Inc.
- Package：Tray
- Technology：GaN HEMT
- Frequency：3GHz ~ 3.5GHz
- Gain：14.5dB
- Voltage - Test：50 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：50 mA
- Power - Output：10W
- Voltage - Rated：150 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：SOT-1227A
- Supplier Device Package：CDFM2
- Configuration：-
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Overview
The CLF1G0060-10U is an RF FET HEMT manufactured by Ampleon USA Inc., designed for high-frequency applications within the 3 GHz to 3.5 GHz range. It delivers a gain of 14.5 dB and an output power of 10 W under test conditions of 50 V and 50 mA. The device features a maximum rated voltage of 150 V and is housed in a SOT-1227B package, suitable for base station infrastructure requiring robust RF performance.
Feature Summary
- Utilizes High Electron Mobility Transistor (HEMT) technology for efficient RF amplification
- Engineered for operation in the 3 GHz to 3.5 GHz frequency spectrum
- Provides stable gain characteristics with a rating of 14.5 dB
- Constructed with a SOT-1227B surface-mount compatible package
Applications
- Base station power amplification
- Broadband RF signal processing
- Wireless communication infrastructure
Procurement Notes
Verify the specific suffix against official Ampleon documentation to confirm exact electrical tolerances and packaging variations. Ensure compatibility with existing thermal management solutions due to the 10 W output requirement. Confirm RoHS compliance status through the manufacturer's current datasheet before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits operating between 3 GHz and 3.5 GHz that require 10 W output power. The 150 V rating allows for appropriate biasing headroom. Compare the SOT-1227B footprint against PCB layout constraints to ensure proper mounting and thermal dissipation pathways are available for the target application.
Part Context
This part belongs to the Ampleon RF transistor portfolio, specifically utilizing HEMT technology for high-frequency efficiency. It serves as a specialized active component for linear amplification tasks in modern wireless networks, distinct from standard LDMOS devices used in lower frequency bands.
Replacement Considerations
Consult official substitution guides for direct equivalents. Verify pinout compatibility and thermal resistance values if considering alternative packages or manufacturers.
