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Product Detailed Parameters
- Description：IGBT MOD 1200V 1000A 7500W
- Series：IGBTMOD™
- Mfr：Powerex Inc.
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 1000A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：-
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：1000 A
- Power - Max：7500 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：100 nF @ 10 V
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Overview
The CM1000DXL-24S is a dual IGBT module from the NX-Series, manufactured by Powerex Inc. It features a 1200 V collector-emitter voltage and a continuous collector current of 900 A at 25°C. The device has a saturation voltage of 1.85 V and a power dissipation rating of 7.5 kW. Operating temperatures range from -40°C to +150°C junction temperature. Gate-emitter leakage current is specified at 500 nA. The module utilizes silicon technology and includes a built-in thermistor for thermal monitoring.
Feature Summary
- Dual IGBT configuration with integrated freewheeling diodes
- NX-Series package design optimized for high-current applications
- Built-in thermistor for precise junction temperature monitoring
- Isolated base plate construction for secure mounting
Applications
- Industrial motor drives and inverters
- Uninterruptible power supply (UPS) systems
- High-power DC-AC conversion circuits
- Medium-voltage traction drive systems
Procurement Notes
Verify component authenticity through authorized Powerex or Mitsubishi Electric distributors. Confirm datasheet revision matches the specific lot code on the module housing. Ensure storage conditions comply with moisture sensitivity levels prior to assembly. Cross-reference pinout diagrams with target PCB layout to prevent interface mismatch during integration.
Selection Notes
Select this module for applications requiring high current density and robust thermal management. The 1200 V rating suits medium-voltage industrial environments. Evaluate thermal resistance characteristics against heatsink capabilities. Consider the dual configuration for half-bridge topologies. Verify gate drive requirements align with the specified leakage and voltage limits.
Part Context
This component belongs to the NX-Series family of IGBT modules, designed for high-power density applications. It represents an evolution in silicon-based switching technology, offering improved thermal performance compared to earlier generations. The series is widely adopted in industrial power electronics where reliability under high stress is critical.
Replacement Considerations
The CM1000DU-34NF is a documented alternative within the Powerex portfolio, though it specifies a 1700 V breakdown voltage rather than 1200 V. Verify electrical compatibility before substitution. No other direct cross-model replacements are confirmed in public documentation.
