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Product Detailed Parameters
- Description：IGBT MOD 1200V 100A 500W
- Series：IGBTMOD™
- Mfr：Powerex Inc.
- Package：Bulk
- IGBT Type：Trench
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 100A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：100 A
- Power - Max：500 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：39 nF @ 10 V
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Overview
The CM100DU-24F is a half-bridge Insulated Gate Bipolar Transistor (IGBT) module manufactured by Powerex Inc. It features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 100 A. The device utilizes carrier stored trench gate bipolar transistor technology, offering low conduction losses and high switching efficiency. Designed for chassis mounting, the module operates within a junction temperature range of -40°C to 150°C. It integrates an IGBT and a freewheeling diode in a single package, providing a compact solution for power conversion applications requiring robust performance and thermal stability.
Feature Summary
- Half-bridge configuration integrating N-channel IGBT and freewheeling diode
- Carrier stored trench gate bipolar transistor technology for optimized switching
- Chassis mount design with isolated case connection
- High thermal stability supporting operation up to 150°C junction temperature
Applications
- Industrial motor drives and variable frequency drives
- Uninterruptible power supplies (UPS)
- Inverter circuits for renewable energy systems
Procurement Notes
Verify component authenticity through authorized Powerex distributors or direct manufacturer channels. Confirm part status as availability may vary due to lifecycle changes. Ensure proper handling procedures are followed during installation to prevent electrostatic discharge damage. Cross-reference datasheet specifications against application requirements before procurement.
Selection Notes
Select this module for applications requiring 1200V blocking capability and 100A continuous current in a half-bridge topology. Evaluate thermal management solutions to maintain junction temperatures within the specified 150°C limit. Consider gate drive requirements compatible with trench gate IGBT characteristics. Verify mechanical fit for chassis mounting constraints.
Part Context
The CM100DU-24F belongs to Powerex's IGBTMOD series, which employs advanced trench gate technology for improved efficiency. This series is designed for medium-power industrial applications. The 'DU' suffix typically denotes a half-bridge configuration with specific terminal arrangements. The '24' indicates the 1200V voltage class, while 'F' may refer to specific internal processing or packaging variations defined by the manufacturer.
Replacement Considerations
Direct replacements must match the 1200V/100A half-bridge specification and physical footprint. Compatible alternatives from other manufacturers require verification of pinout compatibility and thermal resistance values. Ensure substitute devices meet the same switching speed and conduction loss profiles to maintain system performance.
