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The CM100DU-24H is a half-bridge Insulated Gate Bipolar Transistor (IGBT) module manufactured by Powerex Inc. It features a 1200 V collector-emitter breakdown voltage and supports a maximum continuous collector current of 100 A. The device has a maximum power dissipation rating of 650 W and operates within a junction temperature range of -40°C to 150°C. It utilizes a chassis mount package configuration with an isolated case connection. The module incorporates a built-in diode for the complementary switch element.
Verify the specific suffix 'H' against official datasheets, as it may indicate lead-free plating or RoHS compliance status distinct from other variants like 'NF'. Confirm availability through authorized distributors, noting that older Powerex modules may have limited stock or be subject to obsolescence notices.
Select this module for applications requiring 1200 V blocking capability and 100 A current handling in a compact half-bridge format. Ensure the cooling system can dissipate 650 W of heat effectively. Verify gate drive requirements match the input capacitance specifications to ensure proper switching performance.
This component belongs to the CM series of IGBT modules produced by Powerex Inc., which are widely used in medium-power industrial electronics. The CM100DU-24H shares architectural similarities with other models in the lineup, such as the CM100DY-24A, differing primarily in terminal configurations and specific packaging details.
Potential substitutes include the CM100DY-24A or CM100DU-24NF. Verify pin compatibility and thermal resistance values before substitution. Cross-reference with Mitsubishi Electric equivalents if sourcing from different manufacturers.