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Product Detailed Parameters
- Description：IGBT MOD 1200V 100A 780W
- Series：IGBTMOD™
- Mfr：Powerex Inc.
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 100A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：100 A
- Power - Max：780 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：20 nF @ 10 V
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Overview
The CM100DY-24H is a Dual IGBTMOD™ H-Series module manufactured by Powerex Inc., designed for switching applications. It features two IGBT transistors in a half-bridge configuration, each paired with a reverse-connected super-fast recovery free-wheel diode. The components and interconnects are isolated from the heat sinking baseplate to simplify system assembly and thermal management. Key electrical ratings include a collector-emitter voltage (V_CES) of 1200 Volts and a continuous collector current (I_C) of 100 Amperes. The module supports high-frequency operation between 20-25 kHz and offers low drive power requirements.
Feature Summary
- Half-bridge configuration with discrete super-fast recovery free-wheel diodes
- Isolated baseplate for simplified thermal management and system assembly
- Low V_CE(sat) and low drive power characteristics
- Designed for high-frequency operation
Applications
- AC Motor Control
- Motion/Servo Control
- UPS
- Welding Power Supplies
- Laser Power Supplies
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement, as suffixes may indicate variations in packaging or testing standards that do not alter the core electrical function. Confirm availability status directly with the manufacturer or authorized distributors, as component lifecycle stages can change without immediate public notice. Ensure mounting torque specifications are strictly followed during installation to maintain device integrity.
Selection Notes
Select this module for applications requiring a 1200V/100A half-bridge topology with integrated fast recovery diodes. Consider the thermal resistance values (0.16°C/W per IGBT, 0.35°C/W per FWDi) when designing the heatsink interface. Verify that the operating frequency aligns with the module's specified range of 20-25 kHz to ensure optimal switching performance and minimize losses.
Part Context
This component belongs to the IGBTMOD™ H-Series line from Powerex Inc., which focuses on standard IGBT modules for industrial switching. The 'CM' prefix denotes the series, '100' indicates the 100 Ampere current rating, 'DY' signifies the dual half-bridge configuration, and '24' represents the 1200 Volt voltage class. This series is distinct from IPM or other multi-unit configurations within the broader product portfolio.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided datasheet. Engineers should consult Powerex Inc. directly for qualified replacements or cross-reference with similar half-bridge modules from other manufacturers, ensuring matching voltage, current, and thermal parameters.
