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Product Detailed Parameters
- Description：IGBT MOD 600V 200A 650W
- Series：IGBTMOD™
- Mfr：Powerex Inc.
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：200 A
- Power - Max：650 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：17.6 nF @ 10 V
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Overview
The CM200DU-12H is a 1200 V, 200 A insulated gate bipolar transistor (IGBT) module from the Powerex IGBT family. It utilizes carrier stored trench gate bipolar transistor technology to achieve low conduction and switching losses. The device features an anti-parallel fast recovery diode integrated within the same package. Designed for high-power industrial applications, it offers robust short-circuit capability and thermal stability. The module construction ensures reliable operation under demanding electrical conditions typical of modern power electronics systems.
Feature Summary
- Integrates an IGBT with an anti-parallel fast recovery diode in a single package
- Employs carrier stored trench gate bipolar transistor technology for efficiency
- Provides high current handling capacity suitable for heavy-duty loads
Applications
- Industrial motor drives
- Uninterruptible power supplies
- Induction heating systems
Procurement Notes
Verify the specific manufacturer datasheet for the CM200DU-12H to confirm pinout configurations and mechanical dimensions before integration. Ensure that the sourcing channel provides authentic components with traceable documentation to guarantee performance reliability in critical power conversion circuits.
Selection Notes
Select this component when designing systems requiring high voltage blocking and substantial current ratings. Consider the thermal management requirements associated with its power dissipation characteristics. Evaluate the switching speed compatibility with the control circuitry to optimize overall system efficiency and electromagnetic interference levels.
Part Context
This module belongs to the broader category of high-power semiconductor devices used in energy conversion. It represents a solution for applications where compact size and high reliability are paramount. The technology focuses on reducing energy loss during transitions between conducting and non-conducting states.
Replacement Considerations
Consult official cross-reference guides or manufacturer substitution lists to identify compatible alternatives. Verify that any substitute part matches the voltage, current, and thermal specifications exactly to maintain system integrity.
