CM200DU-24F

CM200DU-24F

  • Description:IGBT MOD 1200V 200A 890W
  • Series:IGBTMOD™

SKU:fdb9757f72ad Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 1200V 200A 890W
  • Series:IGBTMOD™
  • Mfr:Powerex Inc.
  • Package:Bulk
  • IGBT Type:Trench
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 200A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):200 A
  • Power - Max:890 W
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:78 nF @ 10 V

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CM200DU-24F

Overview

The CM200DU-24F is a dual Insulated Gate Bipolar Transistor (IGBT) module manufactured by Powerex Inc. It features an N-channel configuration with a maximum collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 200 A. The device utilizes the NFH-series flange-mount package, providing isolated case connections for thermal management. Key electrical parameters include a typical saturation voltage of 2.25 V at rated conditions and a maximum operating junction temperature of 150 °C. This component is designed for high-power switching applications requiring robust performance in industrial environments.

Feature Summary

  • Dual IGBT configuration with integrated freewheeling diodes within a single insulated package
  • NFH-series flange-mount design facilitating direct heatsink mounting for efficient thermal dissipation
  • High power density construction optimized for high-frequency switching operations

Applications

  • Induction heating systems
  • Gradient amplifiers
  • High-frequency power supplies

Procurement Notes

Verify the specific manufacturer origin, as this part number is associated with both Powerex and Mitsubishi Electric Semiconductor datasheets. Confirm RoHS compliance status and exact pinout compatibility with existing PCB layouts or busbar assemblies before integration. Ensure thermal interface materials are suitable for the flange-mount form factor to maintain specified thermal resistance values during operation.

Selection Notes

Select this module when a 1200 V, 200 A dual IGBT solution is required for high-power switching circuits. Consider the NFH package dimensions for mechanical fitment and verify gate drive requirements against the input capacitance specifications. Evaluate thermal management capabilities to ensure the system can handle the power dissipation at the intended switching frequency and duty cycle.

Part Context

This component belongs to the CM series of high-power IGBT modules, specifically the DU variant indicating a dual configuration. It is part of the broader family of devices used in medium to high-power electronic converters. The '24' suffix typically denotes the 1200 V voltage class, while 'F' indicates the specific package and terminal configuration within the product line.

Replacement Considerations

Direct replacements may include the CM200DU-24NFH, which shares similar electrical ratings but may differ in packaging details or manufacturer sourcing. Cross-reference with Mitsubishi Electric CM200DU-24F equivalents if supply chain constraints require alternative sourcing from that manufacturer.

CM200DU-24FCM200DU-24F

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