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Product Detailed Parameters
- Description：IGBT MOD 1200V 200A 830W
- Series：IGBTMOD™
- Mfr：Powerex Inc.
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：6.5V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：200 A
- Power - Max：830 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：32 nF @ 10 V
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Overview
The CM200DU-24NFH is an insulated gate bipolar transistor module manufactured by Powerex Inc. It features a dual IGBT configuration with built-in diodes, rated for 200 amperes of collector current and 1200 volts of collector-emitter breakdown voltage. The component utilizes a MODULE-20 flange mount package with seven terminals and isolated case connection. Designed for high-power switching applications, it supports operating temperatures up to 150 °C and complies with RoHS standards.
Feature Summary
- Dual IGBT structure integrated within a single insulated module
- High current handling capability suitable for demanding power electronics
- Flange mount design facilitating efficient thermal management
Applications
- High frequency switching circuits operating between 30kHz and 60kHz
- Gradient amplifiers requiring robust power switching elements
- Induction heating systems utilizing high-power semiconductor modules
- Industrial power supply units needing isolated high-voltage components
Procurement Notes
Verify the manufacturer origin carefully, as this part number is also associated with Mitsubishi Electric Semiconductor. Confirm that the specific datasheet provided matches the Powerex NFH-Series specifications regarding pinout and thermal characteristics before integration into designs.
Selection Notes
Select this module when a dual IGBT configuration with integrated freewheeling diodes is required for high-current applications. Ensure the system design accommodates the MODULE-20 flange mount form factor and provides adequate heat sinking for the specified 200A continuous current rating.
Part Context
This component belongs to the NFH-Series Dual IGBT Modules, which are engineered for high-power switching uses. It represents a specific current and voltage rating variant within a broader family of insulated gate bipolar transistors designed for industrial and commercial power conversion equipment.
Replacement Considerations
Cross-reference with CM200DU-24F or CM100DU-24NFH from Mitsubishi Electric if sourcing flexibility is needed, though electrical parameters and pin configurations must be verified against official datasheets to ensure compatibility.
