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The CM200DY-24H is a Dual IGBTMOD™ H-Series module manufactured by Powerex Inc. It features a half-bridge configuration with two IGBT transistors and reverse-connected super-fast recovery free-wheel diodes. The device supports a collector-emitter voltage of 1200 V and a continuous collector current of 200 A. Key electrical parameters include a maximum junction temperature of 150°C, a typical saturation voltage of 2.5 V at 200 A and 15 V gate drive, and a peak collector current of 400 A. Thermal resistance from junction to case is 0.085 °C/W for the IGBT and 0.18 °C/W for the free-wheeling diode.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revisions match production batches. Inspect modules for physical damage upon receipt. Ensure proper ESD handling procedures are followed during storage and installation to prevent gate oxide degradation.
Select this module for applications requiring 1200 V blocking capability and 200 A continuous current in a half-bridge arrangement. Evaluate thermal resistance values against heat sink capabilities to maintain junction temperatures within the 150°C limit. Consider the 400 A peak current rating for transient load conditions and verify gate drive compatibility with the specified threshold voltages.
This component belongs to the IGBTMOD™ H-Series line, designed specifically for switching applications. It represents a dual-module variant offering integrated free-wheeling diodes within a single chassis-mount package. The series emphasizes simplified thermal management through its isolated baseplate architecture.
Direct replacements must match the 1200V/200A half-bridge specification and compatible mounting dimensions. Verify equivalent thermal resistance and switching characteristics before substitution.