CM200HA-24H

Overview

The CM200HA-24H is a single IGBTMOD™ H-Series module manufactured by Powerex, Inc. It features one N-channel Insulated Gate Bipolar Transistor and a reverse-connected super-fast recovery free-wheel diode. The collector-emitter voltage (V_CES) is rated at 1200 Volts, and the continuous collector current (I_C) is 200 Amperes. The peak collector current reaches 400 Amperes. The junction temperature range spans from -40°C to 150°C. Thermal resistance from junction to case is 0.085 °C/W for the IGBT and 0.18 °C/W for the diode. The module utilizes an isolated baseplate design.

Feature Summary

• Isolated baseplate construction simplifies system assembly and thermal management
• Discrete super-fast recovery free-wheel diode with 135ns reverse recovery time
• Optimized for high-frequency operation between 20kHz and 25kHz
• Low drive power requirements combined with low saturation voltage

Applications

• AC Motor Control
• Motion/Servo Control
• UPS Systems
• Welding Power Supplies
• Laser Power Supplies

Procurement Notes

Verify the specific part number against official manufacturer documentation to confirm electrical ratings and pinout configurations. Ensure that the ordering suffix matches the required terminal style, as variations exist within the product family. Cross-reference datasheet specifications with supplier certificates of conformity to validate authenticity and compliance with RoHS standards before finalizing procurement orders.

Selection Notes

Select this component based on the 1200V blocking capability and 200A continuous current rating suitable for medium-power switching applications. Evaluate the thermal resistance values to ensure adequate heat sinking for the intended duty cycle. Confirm that the gate drive circuitry can support the specified threshold voltage and total gate charge requirements for reliable switching performance in the target environment.

Part Context

This module belongs to the IGBTMOD™ H-Series line designed for robust switching applications. It integrates a single IGBT transistor with a discrete anti-parallel diode in a flange-mount package. The design emphasizes simplified thermal management through an electrically isolated baseplate, allowing direct mounting to heatsinks without additional insulators while maintaining high isolation voltage ratings.

Replacement Considerations

Direct replacements must match the 1200V/200A rating and single IGBT configuration. Verify pin compatibility and thermal interface dimensions when substituting. Check if alternative modules offer similar reverse recovery times or lower saturation voltages for improved efficiency in existing designs.