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The CM200TL-24NF is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Powerex Inc. It features a bridge configuration with six elements and built-in diodes, housed in a MODULE-20 flange mount package with 20 terminals. The device supports a maximum collector current of 200 A and a collector-emitter breakdown voltage of 1200 V. It operates at temperatures up to 150 °C and complies with RoHS standards.
Verify the specific manufacturer datasheet for detailed electrical characteristics and mechanical drawings. Confirm that the MODULE-20 package dimensions match the intended PCB or heatsink layout. Ensure the 200 A current rating and 1200 V voltage withstand capabilities align with the system design requirements before integration.
Select this component when a high-current IGBT bridge module is required for power conversion applications. The 200 A rating suits heavy-duty industrial loads. Verify compatibility with standard gate drive voltages and ensure adequate cooling solutions are available for the flange mount form factor to maintain operation within the 150 °C limit.
This part belongs to the Powerex IGBT module family, specifically designed for high-power switching applications. The CM200TL-24NF variant provides a robust solution for three-phase bridge circuits, combining N-channel IGBTs with anti-parallel diodes in a single isolated package for simplified assembly and improved reliability in demanding environments.
Cross-reference with other 200 A, 1200 V IGBT modules in the MODULE-20 package from compatible manufacturers. Verify pinout compatibility and thermal resistance values to ensure direct replacement without circuit redesign.