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The CM200DU-12H is a dual IGBT module from the NF-Series family, rated for 600 V and 300 A. It features a half-bridge configuration with two IGBT transistors and integrated reverse-connected super-fast recovery free-wheel diodes. The components are isolated from the heat-sinking baseplate to simplify thermal management. Key electrical parameters include a collector-emitter saturation voltage of 2.4 V at 300 A, a maximum switching frequency capability, and a continuous collector current of 300 A. The module utilizes screw mount installation in a flange-mount package.
Verify the specific manufacturer source, as the part number CM200DU-12H appears in listings attributed to multiple vendors including Mitsubishi Electric Semiconductors and Inchange Semiconductor alongside Powerex. Confirm the datasheet matches the required NF-Series specifications before procurement to ensure compatibility with intended thermal and electrical designs.
Select this module for applications requiring high-power switching with low drive power needs. The isolated baseplate facilitates easier heat sinking integration compared to non-isolated alternatives. Ensure the cooling solution supports the thermal dissipation requirements for continuous 300 A operation in half-bridge configurations.
This component belongs to the NF-Series of IGBT modules designed for general-purpose high-power switching. It shares the half-bridge topology with other series members but is distinguished by its specific 600 V/300 A rating and integrated super-fast recovery diodes, targeting industrial power conversion and motor drive markets.
Cross-reference with CM300DY-12NF or CM300DU-12H variants from other manufacturers if sourcing constraints exist. Verify pinout compatibility and thermal resistance values when substituting, as packaging dimensions may vary between suppliers offering equivalent electrical ratings.