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The CM50DY-12H is a dual IGBTMOD™ H-Series power module manufactured by Powerex Inc. It features a half-bridge configuration with two N-channel IGBTs and discrete super-fast recovery free-wheel diodes. The device supports a collector-emitter voltage (V_CES) of 600 Volts and a continuous collector current (I_C) of 50 Amperes. Key electrical parameters include a typical saturation voltage (V_CE(sat)) of 2.1V at 50A, a gate threshold voltage range of 4.5V to 7.5V, and an input capacitance of 5.0nF. Thermal characteristics specify a junction-to-case thermal resistance of 0.50°C/W per IGBT and 1.00°C/W per free-wheel diode.
Verify component authenticity through authorized Powerex distributors or certified channels. Confirm that the specific unit matches the CM50DY-12H designation and review datasheet revisions for any updates to absolute maximum ratings or thermal characteristics prior to integration into final designs.
Select this module for applications requiring a 600V rating and 50A continuous current capacity in a compact half-bridge format. Ensure the cooling solution can handle the specified thermal resistances of 0.50°C/W for the IGBT and 1.00°C/W for the diode. Verify that the operating frequency aligns with the module's capability for 20-25kHz switching operations.
This component belongs to the IGBTMOD™ H-Series line from Powerex Inc., designed specifically for robust switching applications. The series utilizes a standardized mechanical outline to facilitate mounting on standard heat sinks, ensuring compatibility with existing industrial power electronics architectures while providing reliable performance under high thermal stress.
When evaluating substitutes, ensure the replacement part maintains the same 600V/50A rating and half-bridge configuration. Verify mechanical footprint compatibility, particularly the M5 terminal thread and mounting screw dimensions, as well as equivalent thermal resistance values to maintain system cooling efficiency.
The peak collector current (I_CM) rating is 100 Amperes, provided the pulse width and repetition rate are controlled to ensure the junction temperature does not exceed the maximum rating.
The module provides an isolation voltage (V_ISOLATION) of 2500 Volts RMS between the electrical terminals and the isolated baseplate.
The typical reverse recovery time (t_rr) for the diode is 110 nanoseconds when tested at a forward current of 50A and a di/dt of -100A/μs.