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Product Detailed Parameters
- Description：IGBT MOD 1200V 50A 400W
- Series：IGBTMOD™
- Mfr：Powerex Inc.
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 50A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Power - Max：400 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：10 nF @ 10 V
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Overview
The CM50DY-24H is a Dual IGBTMOD™ H-Series power module manufactured by Powerex, Inc. It features two N-channel IGBT transistors in a half-bridge configuration with reverse-connected super-fast recovery free-wheel diodes. The device supports a collector-emitter voltage (V_CES) of 1200 Volts and a continuous collector current (I_C) of 50 Amperes at Tj = 25 °C. Peak collector current reaches 100 Amperes. Key electrical parameters include a typical V_CE(sat) of 2.5 Volts at 50A/15V, total gate charge of 250 nC, and junction temperature range from -40 to 150 °C. Thermal resistance from junction to case is 0.31 °C/W for the IGBT and 0.70 °C/W for the diode.
Feature Summary
- Half-bridge configuration with integrated discrete super-fast recovery free-wheel diodes
- Isolated baseplate design for simplified system assembly and thermal management
- Optimized for low drive power requirements and high-frequency operation between 20-25kHz
Applications
- AC Motor Control
- Motion/Servo Control
- UPS Systems
- Welding Power Supplies
- Laser Power Supplies
Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm part number accuracy against datasheet specifications before integration. Ensure proper handling procedures are followed due to semiconductor sensitivity. Review mounting torque limits (M5: 17 in-lb, M6: 26 in-lb) during installation to prevent mechanical damage.
Selection Notes
Select this module for applications requiring 1200V blocking capability and 50A continuous current in a compact half-bridge topology. Consider thermal resistance values when designing heat sinking solutions. Verify switching frequency compatibility within the 20-25kHz operational range. Evaluate gate drive requirements against the specified 250 nC total gate charge parameter.
Part Context
This component belongs to the Powerex IGBTMOD™ H-Series family, designed specifically for general-purpose switching applications. The 'CM' prefix indicates the module series, '50' denotes the 50 Ampere current rating, 'DY' signifies the dual half-bridge circuit structure, and '24' represents the 1200 Volt voltage level classification.
Replacement Considerations
Direct substitutes require matching 1200V/50A ratings and half-bridge configuration. Verify pinout compatibility and thermal interface dimensions. Cross-reference switching characteristics and gate charge requirements with target application circuits to ensure functional equivalence.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150 °C.
What is the isolation voltage rating?
The module provides an isolation voltage (V_Isolation) of 2500 Volts RMS.
What is the typical reverse recovery time for the free-wheel diode?
The typical diode reverse recovery time (t_rr) is 250 ns under test conditions of IE = 50A and diE/dt = -100A/μs.
