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The CM50E3U-24H is a high-power switching Insulated Gate Bipolar Transistor (IGBT) module manufactured by Powerex. It features a chopper configuration with a maximum collector current of 50 Amperes and a collector-emitter breakdown voltage of 1200 Volts. The device integrates one IGBT transistor with reverse-connected superfast recovery free-wheel diodes and an anode-collector connected superfast recovery free-wheel diode. All internal components and interconnects are electrically isolated from the heat sinking baseplate, facilitating simplified system assembly and thermal management.
Verify the specific manufacturer source, as this component type is also produced by Mitsubishi Electric Semiconductors under identical part numbers. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before procurement.
Select this module for applications requiring high-frequency operation between 15 kHz and 20 kHz. Ensure the thermal management solution accommodates the isolated baseplate design to maintain junction temperatures within specified limits during continuous switching operations.
This component belongs to the IGBTMOD series designed for high-power switching applications. It shares architectural similarities with other modules in the series, such as the CM100E3U-24H and CM150E3U-24H, differing primarily in current handling capabilities while maintaining consistent voltage ratings and packaging characteristics.
Equivalent parts include the CM100E3U-24H and CM150E3U-24H from Powerex, which share the same package and voltage rating but offer higher current capacities. Mitsubishi Electric Semiconductors produces functionally identical modules under the same part number designation.