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The CM50TU-24F is a six-element insulated gate bipolar transistor (IGBT) module manufactured by Powerex. It features a Trench Gate design optimized for high-power switching applications. The device supports a collector-emitter voltage of 1200 V and a continuous collector current of 50 A. Key electrical parameters include a collector-emitter saturation voltage of approximately 2.25 V at rated conditions. The module integrates six IGBTs with built-in diodes in a single package, providing a compact solution for power conversion systems.
Verify the manufacturer source carefully as this component has been produced by both Powerex and Mitsubishi Electric. Confirm the specific datasheet version matches your design requirements. Ensure the package dimensions and pinout align with your PCB layout before ordering. Check for any RoHS compliance markings if required by your project specifications.
Select this module for applications requiring moderate current levels up to 50 A with 1200 V blocking capability. The six-element design reduces board space compared to discrete solutions. Consider thermal management requirements based on the specified power dissipation. Verify that the switching frequency of the application is compatible with the device's dynamic characteristics.
This component belongs to the CM series of IGBT modules from Powerex. Similar parts in the family include the CM75TU-24F and CM100DU-24F, which offer higher current ratings or different configurations. These modules are commonly used in industrial motor drives and power supplies.
The CM50TU-24F is functionally equivalent to the Mitsubishi Electric CM50TU-24F. When substituting, verify that the mechanical footprint and terminal arrangement are identical. Electrical parameters such as Vces and Ic should be matched or exceeded.