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Product Detailed Parameters
- Description：RF TRANS PNP 40V 500MHZ TO-39
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- Transistor Type：PNP
- Voltage - Collector Emitter Breakdown (Max)：40V
- Frequency - Transition：500MHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：1W
- DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 50mA, 5V
- Current - Collector (Ic) (Max)：400mA
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-205AD, TO-39-3 Metal Can
- Supplier Device Package：TO-39
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor CM5160 PBFREE is a silicon PNP RF transistor housed in a hermetically sealed TO-39 case. Designed for high-frequency amplifier and non-saturated switching applications, it serves as a replacement for the 2N5160. The device supports a collector-base voltage of 60 V, a collector-emitter voltage of 40 V, and an emitter-base voltage of 4.0 V. It handles a continuous collector current of 0.4 A with power dissipation ratings of 1.0 W at ambient temperature and 5.0 W at case temperature. Key electrical characteristics include a transition frequency (fT) of 500 MHz and a maximum operating junction temperature of +200 °C.
Feature Summary
- Hermetically sealed package construction suitable for demanding environments
- Optimized for high-frequency amplifier and non-saturated switching operations
- Direct replacement compatibility with legacy 2N5160 specifications
Applications
- High frequency amplifier circuits
- Non-saturated switching applications
Procurement Notes
Verify availability status carefully before procurement planning. Official documentation indicates this product has been discontinued and is classified as End of Life. Orders are restricted to existing inventory on hand only. No further production orders can be accepted. Contact local sales representatives directly to confirm current stock levels and secure remaining units immediately.
Selection Notes
Select this component specifically for designs requiring a PNP RF transistor in a TO-39 metal can package. Ensure the application operates within the specified 40 V collector-emitter voltage limit and 0.4 A continuous current rating. Verify that the thermal management strategy accommodates the 175 °C/W junction-to-ambient thermal resistance if case cooling is not utilized.
Part Context
This component belongs to the Central Semiconductor RF transistor portfolio, specifically designed for radio frequency applications. It utilizes a silicon planar process technology encapsulated in a standard TO-39 metal case. The device is engineered to provide reliable performance in high-frequency signal processing tasks where hermetic sealing is required.
Replacement Considerations
No direct replacement part numbers are available from the manufacturer. The official notice lists this item as 'Stock Only' with no alternative components provided. Designers must evaluate existing inventory or seek third-party equivalents independently.
