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The CM600DU-24F is a high-power switching Insulated Gate Bipolar Transistor (IGBT) module manufactured by Powerex Inc. It features an N-channel configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 600 A. The device integrates two elements in a single package, including built-in diodes, arranged in a series-connected center-tap configuration. Designed for robust performance, it supports a maximum operating temperature of 150 °C and utilizes a flange mount rectangular package with seven terminals. This component is classified as an insulated type suitable for demanding industrial applications.
Verify the specific manufacturer origin, as this part number appears in catalogs from both Mitsubishi Electric Semiconductor and Powerex Inc. Confirm that the datasheet corresponds to the NFH-series specifications if sourcing from Powerex, ensuring compatibility with required thermal and electrical parameters before procurement.
Select this module for applications requiring high current handling up to 600 A and voltage ratings of 1200 V. Ensure the cooling system supports the flange mount form factor and can maintain junction temperatures within the 150 °C limit. Verify gate drive requirements against the specific datasheet provided by the supplier to ensure proper switching characteristics.
This component belongs to the CM series of standard IGBT modules, specifically the DU configuration which denotes a dual-element pack. It is part of the NF/NFH series lineage, designed for high-power switching uses. The '24' suffix typically indicates a 1200 V voltage class within this product family.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other CM600DU-24 variants or equivalent 600A/1200V dual IGBT modules only after verifying pinout and parameter alignment with official datasheets.