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Product Detailed Parameters
- Description：IGBT MOD 1200V 75A 600W
- Series：IGBTMOD™
- Mfr：Powerex Inc.
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 75A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Power - Max：600 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：15 nF @ 10 V
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Overview
The Powerex CM75DY-24H is a Dual IGBTMOD™ H-Series module rated for 1200V collector-emitter voltage and 75A continuous collector current. It integrates two IGBT transistors in a half-bridge configuration, each paired with a discrete super-fast recovery free-wheel diode featuring a reverse recovery time of 250ns maximum. The device operates within a junction temperature range of -40°C to 150°C and dissipates up to 600W of power. Key electrical parameters include a typical VCE(sat) of 2.5V at 75A/15V, a total gate charge of 375nC, and thermal resistance from junction to case of 0.21°C/W per IGBT.
Feature Summary
- Half-bridge configuration with integrated super-fast recovery free-wheel diodes
- Isolated baseplate design for simplified system assembly and thermal management
- Optimized for low drive power requirements and high-frequency operation between 20-25kHz
Applications
- AC Motor Control
- Motion/Servo Control
- UPS Systems
- Welding Power Supplies
- Laser Power Supplies
Procurement Notes
Verify the specific manufacturer datasheet for the most current mechanical dimensions and electrical limits before integration. Confirm that the mounting torque specifications for M5 terminals (17 in-lb) and M6 screws (26 in-lb) are strictly adhered to during installation to prevent mechanical failure. Ensure thermal interface material application matches the specified contact thermal resistance values.
Selection Notes
Select this component for applications requiring a dual IGBT half-bridge topology with fast switching characteristics. The 1200V rating suits medium-voltage industrial drives. Evaluate the 0.21°C/W junction-to-case thermal resistance against your heatsink capabilities to ensure the 600W power dissipation limit is not exceeded under peak load conditions.
Part Context
This module belongs to the IGBTMOD™ H-Series line, designed specifically for robust switching applications. The 'DY' designation indicates a dual unit configuration, while '24' signifies the 1200V voltage class. It utilizes standard chassis mounting techniques compatible with common industrial heat sink profiles.
Replacement Considerations
Direct replacements must match the 1200V/75A rating and half-bridge configuration. Verify pinout compatibility and thermal resistance values. Cross-reference with other manufacturers' 17mm or similar form-factor modules if space constraints exist.
