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The Rectron CMBT2222A-T is an NPN silicon planar epitaxial transistor housed in a surface-mount SOT-23 package. It supports a maximum collector current of 600 mA and a collector-emitter voltage of 40 V. The device features a DC current gain ranging from 100 to 300 at specified test conditions, with a transition frequency exceeding 300 MHz. Total power dissipation is rated at 250 mW at 25°C ambient temperature, while the junction temperature can reach up to 150°C.
Verify the specific ordering suffix against official Rectron documentation to confirm packaging details such as reel quantity or tape specifications. Ensure that the component meets all required environmental compliance standards for the intended deployment environment before finalizing procurement orders.
Select this component when a standard NPN switching transistor is required in a space-constrained design. Consider the thermal resistance and power dissipation limits relative to the expected operating load. Confirm that the voltage ratings align with the circuit's maximum operational peaks to ensure reliable long-term performance.
This part belongs to the CMBT series of bipolar junction transistors manufactured by Rectron. It serves as a surface-mount alternative to through-hole variants, facilitating automated assembly processes. The device is engineered to meet standard industry requirements for general-purpose electronic applications.
Cross-reference with MMBT2222A equivalents from other manufacturers if pin compatibility is required. Verify that substitute components match the electrical characteristics and physical dimensions to ensure seamless integration into existing layouts.