CME7660-000

RF Diode Overview

The CME7660-000 is an N-type silicon Schottky barrier diode chip designed for Ku-band applications up to 40 GHz. It features a medium barrier design with a maximum reverse voltage of 2 V and a forward current rating of 100 mA. The device exhibits a capacitance (CJ) of 0.15 pF at 0 V, a forward voltage (VF) of 350–450 mV at 1 mA, and a slope resistance (RT) of 10 Ω at 10 mA. Operating temperature ranges from -55°C to +150°C, with storage limits between -60°C and +200°C.

RF Diode Feature Summary

• N-type silicon construction optimized for low conversion loss mixers and biased detectors
• Planar passivated beam-lead and chip design ensuring close impedance control
• Large bond pad configuration to prevent mechanical damage during wire bonding

RF Diode Applications

• Microwave integrated circuit (MIC) detector modules
• Ku-band mixer circuits requiring low conversion loss
• Biased video detector applications

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact electrical tolerances and packaging type. Confirm availability status as distribution channels may list obsolete or discontinued inventory. Ensure handling procedures comply with industry-standard ESD precautions to prevent device degradation prior to installation.

RF Diode Selection Notes

Select this component when designing Ku-band systems requiring N-type material characteristics for biased detection or low-loss mixing. Compare the 0.15 pF capacitance and 350–450 mV forward voltage against system impedance requirements. Evaluate the suitability of the universal chip format for custom substrate mounting versus pre-packaged beam-lead alternatives.

RF Diode Part Context

This part belongs to Skyworks' Silicon Schottky Barrier Diode Bondable Chips and Beam Leads family. It shares the general planar passivation and beam-lead architecture found in the DDB, CDB, and CDF series, but utilizes N-type silicon specifically for different noise and bias performance profiles compared to the P-type variants.

RF Diode Replacement Considerations

Direct functional substitutes within the same datasheet include other Ku-band N-type chips such as the CDP7624-000. Designers should verify that the alternative part's capacitance and forward voltage parameters align with the existing circuit impedance matching network.