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Product Detailed Parameters
- Description：SICFET N-CH 1200V 42A TO247-3
- Series：Z-FET™
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：20V
- Rds On (Max) @ Id, Vgs：110mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：90.8 nC @ 20 V
- Vgs (Max)：+25V, -5V
- Input Capacitance (Ciss) (Max) @ Vds：1915 pF @ 800 V
- FET Feature：-
- Power Dissipation (Max)：215W (Tc)
- Operating Temperature：-55°C ~ 135°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The CMF20120D is a discrete Silicon Carbide (SiC) MOSFET manufactured by Wolfspeed. It utilizes the WolfPACK package technology, which integrates multiple die to achieve low thermal resistance and high current handling capabilities. The device is designed for high-efficiency power conversion applications requiring robust performance under demanding electrical conditions.
Feature Summary
- Utilizes Wolfspeed's proprietary WolfPACK packaging technology for optimized thermal management and reduced parasitic inductance.
- Engineered with advanced Silicon Carbide material properties to support high switching frequencies and improved system efficiency.
- Designed to facilitate design-to-cost optimization through flexible integration into various industry-standard power modules.
Applications
- Industrial motor drives and servo systems
- Electric vehicle traction inverters and onboard chargers
- High-efficiency DC-DC converters for data centers and renewable energy systems
Procurement Notes
Verify the specific suffix codes on the component marking against official Wolfspeed documentation to confirm exact binning, temperature range, and package variant. Ensure that the ordering information matches the required voltage and current ratings for your specific application design constraints.
Selection Notes
Select this component when designing systems that require high power density and efficient thermal dissipation. Consider its compatibility with existing gate drive circuits and the need for low-inductance PCB layouts to fully leverage the WolfPACK package advantages for high-frequency switching operations.
Part Context
This discrete SiC MOSFET belongs to Wolfspeed's portfolio of wide-bandgap semiconductors aimed at replacing traditional silicon devices. It supports the transition towards more compact and efficient power electronics across automotive, industrial, and consumer sectors by offering superior performance metrics compared to conventional IGBTs or silicon MOSFETs.
Replacement Considerations
Direct pin-to-pin replacements may not be available due to unique WolfPACK footprint requirements. Evaluate alternative Wolfspeed discrete SiC MOSFETs or integrated modules based on thermal resistance and switching speed similarities rather than simple form-factor matching.
