Diode Arrays CMKD7000 TR PBFREE product image

CMKD7000 TR PBFREE

$0.10
  • Description:DIODE ARRAY GP 100V 200MA SOT363
  • Series:-

SKU:54e5140af5e0 Category: Brand:

  
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CMKD7000 TR PBFREE is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is DIODE ARRAY GP 100V 200MA SOT363. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for CMKD7000 TR PBFREE

  • Description:DIODE ARRAY GP 100V 200MA SOT363
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:2 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):200mA
  • Voltage - Forward (Vf) (Max) @ If:1.1 V @ 100 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):4 ns
  • Current - Reverse Leakage @ Vr:500 nA @ 100 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for CMKD7000 TR PBFREE

CMKD7000 TR PBFREE

Diode Arrays Overview

The CMKD7000 TR PBFREE is a surface mount dual pair, in-series ultra-high speed silicon switching diode manufactured by Central Semiconductor Corp. It features two electrically isolated, series-configured diodes housed in an ULTRAmini SOT-363 package. Key electrical parameters include a peak repetitive reverse voltage of 100 V and an average forward current of 200 mA per diode. The device supports a peak forward current of 500 mA with a power dissipation rating of 250 mW. Operating junction temperature ranges from -65 to +150 °C. Reverse leakage current is specified at 500 nA maximum at 100 V, while the reverse recovery time is typically 4.0 ns.

Diode Arrays Feature Summary

  • Contains two electrically isolated, series-configured ultra-high speed switching diodes within a single compact surface mount package.
  • Designed specifically for electrostatic discharge (ESD) protection applications requiring high-speed signal handling.
  • Features low capacitance characteristics suitable for maintaining signal integrity in high-frequency circuits.

Diode Arrays Applications

  • Electrostatic discharge (ESD) protection
  • High speed switching applications

Diode Arrays Procurement Notes

Verify that the ordering suffix matches the required plating specification. The PBFREE designation indicates lead-free plating compliance. Confirm the reel packaging format aligns with automated assembly requirements. Ensure the component meets environmental regulations relevant to the target market before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when designing circuits requiring dual, isolated, series-connected diodes in a minimal footprint. The SOT-363 package offers space efficiency compared to discrete solutions. Consider the 100 V reverse voltage rating and 200 mA average forward current limits to ensure adequate headroom for the specific application loads and transient conditions.

Diode Arrays Part Context

This part belongs to Central Semiconductor's ULTRAmini family of surface mount devices. The manufacturer specializes in discrete semiconductor products including diodes, transistors, and MOSFETs. The CMKD7000 utilizes the K00 marking code for identification on the package surface. The product line emphasizes high reliability and performance for industrial and commercial electronics.

Diode Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

Diode Arrays FAQ

What is the pin configuration for the SOT-363 case?

Pin 1 is Anode D1, Pin 2 is Cathode D2, Pin 3 is Anode D3/Cathode D4, Pin 4 is Anode D4, Pin 5 is Cathode D3, and Pin 6 is Cathode D1/Anode D2.

What is the typical reverse recovery time for the CMKD7000?

The typical reverse recovery time is 2.0 ns, with a maximum of 4.0 ns under specified test conditions.

How are the internal diodes configured?

The device consists of two pairs of electrically isolated, series-configured diodes.

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