CMKDM8005 TR PBFREE

$0.68

Description：MOSFET 2P-CH 20V 0.65A SOT363
Series：-

SKU:0b6ac6f6c5b0 Category: FET, MOSFET Arrays Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 0.65A SOT363
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：650mA
Rds On (Max) @ Id, Vgs：360mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：100pF @ 16V
Power - Max：350mW
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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CMKDM8005 TR PBFREE

Overview

The CMKDM8005 TR PBFREE is a surface-mount silicon dual P-channel enhancement-mode MOSFET manufactured by Central Semiconductor Corp. It features a SOT-363 package with a maximum drain-source voltage of 20V and a continuous drain current of 650mA. The device offers a low on-resistance of 0.36Ω at VGS=4.5V and ID=350mA, with a threshold voltage of 1.0V max. Power dissipation is rated at 350mW, and the operating junction temperature range spans from -65°C to +150°C.

Feature Summary

Dual P-channel configuration in a compact SOT-363 surface mount package
Logic level compatible with very low threshold voltage for efficient switching
Very low on-resistance (rDS(ON)) optimized for high-speed pulsed amplifier applications
ESD protection up to 1800V according to Human Body Model standards

Applications

Load switch and level shifting circuits
Battery charging systems
Boost switch configurations
Electro-luminescent backlighting drivers

Procurement Notes

Verify the component marking code C85M against the physical device to confirm authenticity. Ensure the ordering suffix matches the required plating specification, as PBFREE indicates lead-free compliance. Confirm the specific tape and reel quantity requirements with the distributor prior to finalizing procurement orders.

Selection Notes

Select this component for designs requiring dual P-channel MOSFETs in small form factors. The logic-level compatibility allows direct drive from standard digital interfaces. Verify that the 350mW power dissipation rating and thermal resistance of 357°C/W are sufficient for the intended application's thermal environment.

Part Context

This part belongs to the Central Semiconductor CMxxDM series of surface-mount silicon MOSFETs. It is specifically designed for high-speed pulsed amplifier and driver applications where low on-resistance and fast switching times are critical performance parameters.