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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.28A SOT563
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：280mA
- Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.59nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：350mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The CMLDM7002AG is a surface-mount silicon dual N-channel enhancement-mode MOSFET manufactured by Central Semiconductor Corp. It utilizes an N-Channel DMOS process and features the USA pinout configuration within an SOT-563 package. The device supports a drain-source voltage of 60 V and a continuous drain current of 280 mA. Key electrical parameters include a maximum gate-source voltage of 40 V, a typical on-resistance of 2.0 Ω at VGS=10V, and a total gate charge of 0.592 nC. Operating temperatures range from -65°C to +150°C.
Feature Summary
- Dual N-channel enhancement-mode architecture designed for high-speed pulsed amplifier and driver applications
- USA pinout configuration distinguishes this variant from Japanese pinout alternatives
- Halogen-free design compliant with environmental standards
Applications
- High-speed pulsed amplifiers
- Driver circuits
- Switching applications requiring low on-resistance
Procurement Notes
Verify the specific ordering suffix when sourcing components. The 'G' suffix indicates a halogen-free version, while 'PBFREE' denotes lead-free plating options as per manufacturer standard terms. Confirm the USA pinout configuration matches the target PCB footprint requirements before finalizing procurement orders.
Selection Notes
Select this component for designs requiring a dual N-channel MOSFET in a compact SOT-563 package. Ensure the application operates within the 60 V drain-source voltage limit and 280 mA continuous current rating. Consider the thermal resistance of 357 °C/W and available copper pad area for adequate heat dissipation during operation.
Part Context
This part belongs to the CMLDM7002A family of surface-mount silicon dual N-channel enhancement-mode MOSFETs. The family includes variants such as CMLDM7002AJ, which shares similar electrical characteristics but utilizes a Japanese pinout configuration instead of the USA pinout found in the CMLDM7002AG.
Replacement Considerations
The CMLDM7002AJ serves as a functional substitute with identical electrical specifications but requires attention to pinout differences due to its Japanese configuration rather than the USA pinout.
