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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.28A SOT563
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：280mA
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.76nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：350mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The CMLDM7003G TR is a surface-mount dual N-channel enhancement-mode silicon MOSFET manufactured by Central Semiconductor Corp. It utilizes an N-Channel DMOS process and features the USA pinout configuration within an SOT-563 package. The device provides a drain-source voltage of 50 V, continuous drain current of 280 mA, and power dissipation up to 350 mW on specific board configurations. Electrical characteristics include a maximum rDS(ON) of 3.0 Ω at VGS=1.8V and gate charge (Qg) of 0.764 nC at VGS=4.5V. Operating junction temperature ranges from -65°C to +150°C.
Feature Summary
- Dual N-channel configuration with low on-resistance for efficient switching
- ESD protection rated up to 2kV
- Halogen-free design compliant with environmental standards
Applications
- High-speed pulsed amplifier circuits
- Driver applications requiring fast switching
- Low-voltage signal switching
Procurement Notes
Verify the ordering suffix matches the required plating specification. The 'TR' designation indicates tape and reel packaging. Confirm the 'G' suffix aligns with halogen-free requirements. Ensure the USA pinout configuration is compatible with the target PCB footprint. Cross-reference the datasheet revision date against manufacturing batches for accuracy.
Selection Notes
Select this component when a dual N-channel MOSFET in an SOT-563 package is required. The USA pinout differs from the Japanese variant; verify pin assignments before integration. Consider the 3.0 Ω maximum rDS(ON) for low-current applications. Evaluate thermal resistance values based on the specific copper pad area used in the design.
Part Context
This part belongs to the CMLDM7003 series of surface-mount dual N-channel enhancement-mode MOSFETs. The 'G' suffix denotes a halogen-free version, while the 'J' suffix indicates a Japanese pinout configuration. All variants share identical electrical specifications but differ in lead arrangement and environmental compliance markings.
Replacement Considerations
The CMLDM7003J serves as a functional substitute if the Japanese pinout configuration is acceptable. Verify that the alternative device maintains compatibility with the existing PCB land pattern and signal routing constraints.
