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The CMLT3906E TR is a PNP dual transistor from Central Semiconductor Corp, housed in an SOT-563 package. It features a collector-base voltage of 60 V and a collector-emitter voltage of 40 V. The continuous collector current is rated at 200 mA with power dissipation up to 350 mW on ceramic or aluminum core boards. Operating temperature ranges from -65°C to +150°C. Enhanced specifications include a minimum BVCBO of 60 V, a minimum BVEBO of 6.0 V, and a maximum VCE(SAT) of 0.2 V at 50 mA.
Verify the specific ordering suffix against manufacturer documentation to confirm plating options. The base part number requires explicit designation for lead-free or tin/lead configurations. Confirm packaging details such as reel quantities directly with authorized distributors to ensure compliance with assembly requirements.
Select this component when a dual PNP configuration is required in a minimal footprint. The enhanced voltage ratings and low saturation characteristics make it suitable for demanding switching environments. Ensure thermal management aligns with the specified power dissipation limits based on the PCB copper pad area used.
This device belongs to Central Semiconductor's complementary transistor series, which includes NPN variants like the CMLT3904E. The family is designed for small signal applications requiring matched performance characteristics within a single package. The SOT-563 form factor allows for efficient board layout in portable and dense electronic systems.
Direct substitutes may include other dual PNP transistors in SOT-563 packages, such as the DMMT3906. Verify pinout compatibility and electrical parameters carefully before substitution.
The marking code for the CMLT3906E is L06.
The enhanced specification ensures a minimum collector-base voltage (BVCBO) of 60 V, which is higher than the standard 40 V rating found in basic versions.
The typical transition time (td) is 35 ns under standard test conditions of VCC=3.0V and IC=10mA.