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Product Detailed Parameters
- Description：TRANS 2NPN 160V 600MA SOT-563
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：600mA
- Voltage - Collector Emitter Breakdown (Max)：160V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：350mW
- Frequency - Transition：300MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The CMLT5551 TR PBFREE is a surface mount silicon dual high voltage NPN transistor manufactured by Central Semiconductor Corp. It consists of two individual, isolated NPN transistors produced via epitaxial planar process and housed in an SOT-563 package. Key electrical ratings include a collector-emitter voltage (VCEO) of 160 V, continuous collector current (IC) of 600 mA, and power dissipation (PD) of 350 mW at 25°C ambient temperature. The device features a transition frequency (fT) ranging from 100 to 300 MHz and a DC current gain (hFE) between 80 and 250 at IC=10mA. Operating junction temperature spans -65°C to +150°C.
Feature Summary
- Dual configuration with electrically isolated NPN transistors within a single compact SOT-563 surface mount package.
- Designed for high voltage amplifier applications utilizing epitaxial planar silicon technology.
- Provides low saturation voltage characteristics suitable for efficient switching and amplification tasks.
Applications
- High voltage amplifier circuits
- General purpose discrete semiconductor solutions
- Surface mount assembly requiring dual transistor functionality
Procurement Notes
Verify the specific ordering suffix when purchasing. The 'PBFREE' designation indicates lead-free plating compliance as per manufacturer standards. Confirm package type matches the SOT-563 outline and ensure thermal management aligns with the 357°C/W junction-to-ambient resistance rating during integration.
Selection Notes
Select this component when dual isolated NPN structures are required in a small form factor. Ensure the design operates within the 160V collector-emitter limit and 600mA current constraint. Consider the 350mW power dissipation limit and verify that the application environment stays within the specified -65°C to +150°C operating temperature range.
Part Context
This part belongs to Central Semiconductor's lineup of discrete bipolar junction transistors. The CMLT5551 specifically addresses needs for high-voltage dual NPN configurations in surface mount designs. It complements other single or multi-transistor arrays offered by the manufacturer for various industrial and consumer electronics applications.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical parameters against alternative dual NPN SOT-563 devices if substitution is necessary.
FAQ
What is the marking code on the CMLT5551 package?
The marking code on the SOT-563 case is 5C5.
How are the pins configured in the SOT-563 package?
Pin 1 is Emitter Q1, Pin 2 is Base Q1, Pin 3 is Collector Q2, Pin 4 is Emitter Q2, Pin 5 is Base Q2, and Pin 6 is Collector Q1.
What is the maximum collector-base voltage (VCBO)?
The maximum collector-base voltage is 180 V.
