CMPA2060035F1

RF Amplifiers Overview

The CMPA2060035F1 is a GaN on SiC MMIC high power amplifier manufactured by MACOM Technology Solutions. It operates within the 2.0 to 6.0 GHz frequency range and delivers an output power of 40W at 28V. The component utilizes advanced RF technology for broadband performance. It is packaged in a flange configuration suitable for thermal management and integration into high-power RF systems.

RF Amplifiers Feature Summary

• Utilizes Gallium Nitride on Silicon Carbide (GaN on SiC) technology for high efficiency and gain
• Provides broadband operation across the 2.0 to 6.0 GHz spectrum
• Designed as a high power amplifier module with integrated thermal management

RF Amplifiers Applications

• Base station transmitter modules
• Electronic warfare systems
• Test and measurement equipment

RF Amplifiers Procurement Notes

Verify the specific manufacturing lot and date code against current production notices, such as the PCN dated April 25, 2024, to ensure compliance with any design or material changes. Confirm that the flange package orientation matches your thermal interface requirements before finalizing procurement orders.

RF Amplifiers Selection Notes

Select this component when designing systems requiring high linearity and power density in the UHF through lower microwave bands. Ensure the host circuit provides adequate DC bias stability and impedance matching networks optimized for the 2.0-6.0 GHz range to achieve specified performance metrics.

RF Amplifiers Part Context

This part belongs to MACOM's CMPA series of high power amplifiers. It serves as the discrete semiconductor die counterpart to the CMPA2060035F1-AMP evaluation board assembly. While the AMP variant is a development tool, this specific model number represents the core active component intended for integration into custom hardware designs.

RF Amplifiers Replacement Considerations

• CMPA2060035F1-AMP