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Product Detailed Parameters
- Description：MOSFET P-CH 20V 2.3A SOT23F
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 5V
- Rds On (Max) @ Id, Vgs：88mOhm @ 1.2A, 5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 5 V
- Vgs (Max)：12V
- Input Capacitance (Ciss) (Max) @ Vds：800 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23F
- Package / Case：SOT-23-3 Flat Leads
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Overview
The CMPDM202PH is a surface-mount P-channel enhancement-mode silicon MOSFET manufactured using a P-channel DMOS process. It features a maximum drain-source voltage of 20 V and a continuous drain current of 2.3 A at 25°C. The device offers a low on-resistance of 0.093 Ω maximum at VGS=2.5V, with a gate threshold voltage ranging from 0.6 V to 1.4 V. Total gate charge is specified between 8.0 nC and 12.0 nC. It operates within a junction temperature range of -55°C to +150°C and utilizes the SOT-23F package.
Feature Summary
- High current capability designed for pulsed amplifier and driver applications
- Logic level compatibility with low gate threshold voltage
- Low on-resistance optimized for efficient power switching
Applications
- Load and power switches
- Power supply converter circuits
- Battery powered portable equipment
Procurement Notes
Verify component availability status before procurement as this part has been officially discontinued by Central Semiconductor Corp. Confirm if existing inventory remains or if alternative sourcing is required. Review official product discontinuation notices for final shipment dates and last-time-buy deadlines. Ensure technical specifications align with design requirements prior to substitution planning.
Selection Notes
Select this component for designs requiring a P-channel MOSFET with logic-level gate drive compatibility. Verify that the 20 V drain-source voltage rating meets circuit requirements. Consider the thermal resistance and power dissipation limits for heat management in the SOT-23F package. Evaluate the on-resistance characteristics against efficiency targets for load switching applications.
Part Context
This component belongs to the Central Semiconductor discrete semiconductor product line, specifically categorized under single FETs and MOSFETs. It is designed as a high-speed switching device utilizing advanced DMOS technology. The manufacturer provides SPICE models and detailed electrical curves to support circuit simulation and design validation processes.
Replacement Considerations
Official replacement part numbers are not provided in the manufacturer's discontinuation notice. Contact Central Semiconductor engineering for potential alternate source recommendations.
