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Product Detailed Parameters
- Description：MOSFET N-CH 30V 3.6A SOT23F
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：40mOhm @ 1.8A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
- Vgs (Max)：12V
- Input Capacitance (Ciss) (Max) @ Vds：590 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23F
- Package / Case：SOT-23-3 Flat Leads
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Overview
The CMPDM303NH is a surface-mount N-channel enhancement-mode silicon MOSFET manufactured using an N-Channel DMOS process. It features a maximum drain-source voltage of 30 V and a continuous drain current of 3.6 A at steady state. The device offers a low on-resistance of 0.078 Ω maximum at VGS=2.5V, with a gate-source voltage rating of 12 V. Power dissipation is rated at 350 mW, and the operating junction temperature range spans from -55 to +150 °C.
Feature Summary
- Designed for high-speed pulsed amplifier and driver applications
- Logic level compatibility enabled by low threshold voltage
- Low leakage current characteristics
Applications
- Load and power switches
- Power supply converter circuits
- Battery-powered portable equipment
Procurement Notes
Verify component status before procurement as this part has been discontinued. Check for available inventory or contact [email protected] for alternate sourcing assistance. Confirm package type SOT-23F and marking code 303C match design requirements. Ensure lead-free (PBFREE) specifications align with assembly processes.
Selection Notes
Select based on 30 V drain-source voltage and 3.6 A continuous current capabilities. Consider the 350 mW power dissipation limit and 357 °C/W thermal resistance for heat management. Verify logic-level drive compatibility via the 0.6 V typical threshold voltage. Evaluate switching performance using the specified gate charge and capacitance values.
Part Context
This component belongs to Central Semiconductor's discrete semiconductor lineup, specifically within their N-channel enhancement-mode MOSFET category. It utilizes the SOT-23F case outline for surface mount installation. The product line targets compact electronic designs requiring efficient power switching in portable and industrial applications.
Replacement Considerations
This part is classified as End of Life (EOL). No direct replacement part numbers are provided in the discontinuation notice. Contact Central Semiconductor engineering for potential alternate source recommendations.
